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Method for making optical semiconductor integrated circuit

一种集成电路、制造方法的技术，应用在半导体/固态器件制造、半导体器件、电路等方向，能够解决加工精度低、难蚀刻等问题，达到提高加工精度的效果

Inactive Publication Date: 2005-05-04
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when performing etching removal, the etching proceeds in the horizontal direction with respect to the substrate surface, and it is difficult to etch into a desired structure, which has the problem of low processing accuracy.

Method used

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  • Method for making optical semiconductor integrated circuit
  • Method for making optical semiconductor integrated circuit
  • Method for making optical semiconductor integrated circuit

Examples

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Embodiment Construction

[0022] Below, refer to Figure 1 ~ Figure 1 2. A method of manufacturing an optical semiconductor integrated circuit device as an embodiment of the present invention will be described in detail.

[0023] First, if figure 1 As shown, using the photoresist 58 as a mask, boron (B) is ion-implanted on the P-type single crystal silicon substrate 24 . Then, a heat treatment at 1180° C. for about 4 hours is applied by N 2 gas, and boron (B) that forms the first isolation region 31 is diffused on the surface of the P-type single crystal silicon substrate 24 .

[0024] Secondly, if figure 2 As shown, a non-doped first epitaxial layer 25 is formed on a P-type single crystal silicon substrate 24 with a specific resistance above 100Ω·cm and a thickness of 15um.

[0025] Such as image 3 As shown, the surface of the first epitaxial layer 25 is thermally oxidized at about 1100° C. to grow a silicon oxide film of about 6700 Å to form a selective mask. Then, the antimony forming the N+ ...

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Abstract

A method for manufacturing optical semconductor integrated circuit device is provided. In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.

Description

technical field [0001] The present invention relates to a method of manufacturing an optical semiconductor integrated circuit device having a photodiode, and aims to improve the sensitivity of the photodiode by eliminating variations in the thickness of insulating films laminated on the photodiode. Background technique [0002] In photodiodes for blue lasers, since incident light energy is absorbed in the transparent package, the package is sintered. Therefore, hollow packaging must be used in IC packaging. As a result, since the insulating film on the photodiode formation region is in contact with the air in the hollow package, the incident light on the surface of the insulating film is reflected, and this is related to the film thickness of the insulating film. As a result, the sensitivity of the photodiode is affected by the insulating film. deviations due to deviations. [0003] Therefore, there is a technique of covering only a single-layer film of a silicon nitride f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/14H01L21/302H01L21/306H01L21/3065H01L21/311H01L21/461H01L21/82H01L27/06H01L31/10H01L31/18
CPCH01L31/18H01L27/14683H01L21/311H01L27/14H01L31/10
Inventor 高桥强冈部克也初谷明
Owner SANYO ELECTRIC CO LTD