Semiconductor light emitting device

Abstract

The present invention provides a semiconductor light-emitting element, comprising a first conductivity type semiconductor layer formed of a nitride semiconductor; a second conductivity type semiconductor layer formed of a nitride semiconductor and disposed on the first conductivity type semiconductor layer; Formed by semiconductor, the active layer arranged between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; the first electrode electrically connected with the first conductivity type semiconductor layer; The second electrode on the layer; and the metal reflective film provided on the second conductivity type semiconductor layer and on the second electrode.

Description

technical field [0001] The present invention relates to a semiconductor light emitting device using a nitride-based semiconductor. Background technique [0002] In recent years, short-wavelength LEDs, so-called blue LEDs and ultraviolet LEDs, have been widely developed and researched, and have been put into practical use. As semiconductors used in these LEDs, GaN-based compound semiconductors having a large bandgap can be used. For example, in the semiconductor light-emitting device disclosed in Patent Document 1, a GaN-based buffer layer is epitaxially grown on a sapphire substrate, and an n-type GaN layer, an InGaN active layer, a p-type AlGaN layer, and a p-type GaN layer are sequentially stacked thereon. . Then, the semiconductor light-emitting element is mounted on a wiring board with the sapphire substrate facing down, and the light generated in the InGaN active layer passes through the sapphire substrate and is emitted. [0003] In the semiconductor light emitting ...

AI Technical Summary

Problems solved by technology

However, it is also stated in Patent Document 1 that the reflectance of these metals is not good, and the light transmittance is also low.

Therefore, the reflected light in the reflective layer is attenuated by the resistance layer, resulting in low light extraction efficiency

In the semiconductor light-emitting element of Patent Document 1, although such problems can be solved by forming a very thin resistive layer, it is fundamentally impossible to solve them.

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