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Methods of code programming a mask ROM

A read-only memory and encoding technology, applied in read-only memory, static memory, information storage, etc.

Inactive Publication Date: 2005-05-25
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when the component size is close to the analytical limit of photolithography, for example, the code implantation area is 0.15um 2 At the same time, conventional technology requires continuous and accurate pre-coding and actual code line width control to maintain cost-effective device performance

Method used

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  • Methods of code programming a mask ROM
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  • Methods of code programming a mask ROM

Examples

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Embodiment Construction

[0040] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. The same or similar symbols are used in the drawings and the specification to denote the same or similar parts. It is worth noting that the attached drawings are in simplified form and not to exact dimensions. For convenience and clarity in description, directional characters, such as: upper, lower, left, right, upward, downward, upper, lower, lower, rear, and front, etc. correspond to the attached drawings. These directional words should not be used to limit the scope of the invention.

[0041] While illustrative examples are disclosed herein, it is to be understood that these examples are illustrative and should not be construed as limiting. Any modification, selection and equivalent replacement of the detailed content below still fall within the scope and spirit defined by the patent claims of the present invention. For example: those...

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PUM

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Abstract

The invention discloses a method for coding a programmable photomask type read-only memory. According to the method, a first photoresist layer is formed on the word line and the gate oxide layer of the substrate in which the bit line has been implanted. Next, the first photoresist layer is patterned to form precoded light-transmitting holes corresponding to the intersecting word lines and bit lines on all the memory cells. The first photoresist layer is then cured by particle implantation or plasma. Then, a second photoresist layer is formed on the first photoresist layer, and the second photoresist layer is patterned to form actual code light-transmitting holes on the memory cells coded as logical value 0. Particle implantation is performed on each storage unit to be encoded through the precoded light-transmitting holes and the actual code light-transmitting holes.

Description

technical field [0001] The present invention relates to a non-volatile storage device, and more particularly to a method for coding a code programming (Code Programming) read-only memory (Read-only Memory, ROM) semiconductor device. Background technique [0002] The non-volatile semiconductor storage device is designed so that when the power supply disappears or is removed from the semiconductor storage device, the internal data of the device can still be safely stored without being erased. ROM is a non-volatile storage element widely used in digital electronic devices with microprocessors for storing preset programs. [0003] A general ROM component is provided with a memory cell (Memory Cell) array for storing data, and each memory cell includes a transistor. These transistors are generally metal oxide semiconductor field effect transistors (Metal Oxide Semiconductor Field Effect Transistor, MOSFET), and are arranged at the intersection of the bit line and the word line o...

Claims

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Application Information

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IPC IPC(8): G11C16/10
Inventor 杨大弘张庆裕钟维民薛正诚
Owner MACRONIX INT CO LTD
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