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Aluminum nitride powder, method for producing the same and use thereof

A manufacturing method and aluminum nitride technology are applied in the fields of aluminum nitride powder and its manufacture and use to achieve the effect of reducing energy

Inactive Publication Date: 2006-01-11
MITSUI CHEM INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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But this method must use low melting point sintering aid

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  • Aluminum nitride powder, method for producing the same and use thereof

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Experimental program
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Embodiment 1

[0073] use as figure 1 In the shown gas phase reaction apparatus, the reactor 2 is heated by the heating belt 1 and kept at 500° C., and ammonia is introduced through the supply pipe 4 while adjusting the flow rate regulator 3 at the lower part of the reactor 2 . At the same time, triethylaluminum accompanied by nitrogen gas was introduced through the supply pipe 6 while being adjusted by the flow meter 5 . The flow rate is adjusted by the flow regulators 3 and 5 so that the residence time of the reaction gas in the heating area (reaction area) is 2 seconds. Also, the molar ratio of ammonia / triethylaluminum was 20.

[0074] The aluminum nitride powder produced in the reaction area is taken out together with the unreacted gas through the upper part of the reactor 2, separated from the gas by the filter 7, and collected in the collector 8. The collected aluminum nitride powder was put into a stone grinding tube, and heat treatment was carried out at 1300° C. for 3 hours in an ...

Embodiment 2

[0078] After ball milling, processing relative to 100 parts by weight of aluminum nitride, adding Y 2 o 3 3 parts by weight Y 2 o 3 Aluminum nitride powder was sintered in the same manner as in Example 1 except for the sintering aid. The density of the sintered body is 3.29g / cm 3 , is the theoretical density (add Y 2 o 3 99.4% of the corrected value) and the thermal conductivity is 110W / m·k.

Embodiment 3

[0080] Aluminum nitride powder was synthesized in the same manner as in Example 2, except that the heat treatment temperature was 1400° C., and the ground and pulverized spherical medium was 0.5 mmφ zirconia pellets. The specific surface area of ​​the powder after heat treatment is 8.2m 2 / g, the specific surface area after crushing is 33m 2 / g, the primary particle size converted from this is 0.056 μm. In addition, the particle size of the secondary particles was 0.5 μm. Thus, the degree of aggregation was 8.9. The density of the obtained sintered body is 3.25g / cm 3 , which is 98.2% of the theoretical density. In addition, the thermal conductivity was 113 W / m·k.

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Abstract

The invention relates to aluminum nitride powders which are turned into a sintered body at a temperature of no more than 1600 DEG C, thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material. A gaseous phase reaction device shown in figer 1 is used. A reactor (2) is heated by a heating band (1) and maintained at 300 DEG C to 500 DEG C. The reactor is adjusted by a flow adjusting instrument (3) at the same time of being supplied with ammonia through a supplying tube (4); and the reactor is adjusted by a flow adjusting instrument (5) at the same time of being supplied with nitrogen through a supplying tube (6), thereby obtaining aluminum nitride powders. The nitride powders are heated at 1100 to 1500 DEG C in a deoxidized gas atmosphere and / or idle gas atmosphere and then are mechanically processed so as to obtain nitride powders which is 30m2 / g more than the superficial value, and the ratio of the average particle size of the nitride powder and the superficial particle size is equal to or less than 10.

Description

technical field [0001] The present invention relates to aluminum nitride powder and its manufacturing method, aluminum nitride sintered body and its manufacturing method. Background technique [0002] In recent years, with the high integration and high output of electronic materials, the demand for high heat dissipation (high thermal conductivity) substrates to replace the currently used aluminum substrates continues to increase. In view of this situation, adding sintering aids such as beryllium oxide refractory to silicon carbide, aluminum nitride, etc., and sintering the sintered body is considered to be a suitable material to meet the above requirements. In particular, aluminum nitride sintered materials are attracting attention as substrate materials with high thermal conductivity due to their characteristics such as low toxicity and high insulation. [0003] Aluminum nitride sintered bodies are usually produced by sintering aluminum nitride powder. The physical and ch...

Claims

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Application Information

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IPC IPC(8): B22F9/22
Inventor 山崎正人光石健之原田功田中将夫春田浩一渡利广司邱进宇堀田裕司佐藤公泰
Owner MITSUI CHEM INC
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