Image sensor and methods of fabricating the same

Abstract

The present invention concerns a CMOS image sensor with improved sensitivit. A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed ona semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.

Description

technical field [0001] The present invention relates to image sensors, and more particularly to CMOS image sensors with improved sensitivity. Background technique [0002] An image sensor is a device that receives an optical signal from an object and converts the optical signal into an electrical signal. The electrical signal can then be transmitted for further processing, such as digitization, and then stored in a storage device such as a memory or an optical or magnetic disk, or for display on a display, printing, etc. Image sensors are commonly used in devices such as digital cameras, video cameras, printers, facsimile machines, and the like. [0003] Image sensors are generally of two types, charge coupled device (CCD) sensors and CMOS image sensors (CIS). CCD sensors generally have advantages including low noise operation and device uniformity. CIS devices are generally characterized by low power consumption and can operate at high speed due to high frame rate capabi...

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Problems solved by technology

Therefore, the sensitivity of the sensor decreases

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