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Moisture-resistant nano Zn-In2O3 sensor material with three-dimensional structure as well as preparation method and application of same

A zn-in2o3, three-dimensional structure technology, applied in the direction of material analysis, material analysis by electromagnetic means, instruments, etc., can solve the problems of hindering metal oxide semiconductor gas sensors, long response and recovery time, poor stability, etc. Achieve the effects of improving gas sensitivity performance, making raw materials cheap, and providing gas contact surface area

Pending Publication Date: 2021-03-26
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, low sensitivity, long response and recovery time, and poor stability are the bottlenecks hindering the development of metal oxide semiconductor gas sensors. In addition, in high humidity environments, In 2 o 3 The above-mentioned problems of gas sensors are even more prominent

Method used

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  • Moisture-resistant nano Zn-In2O3 sensor material with three-dimensional structure as well as preparation method and application of same
  • Moisture-resistant nano Zn-In2O3 sensor material with three-dimensional structure as well as preparation method and application of same
  • Moisture-resistant nano Zn-In2O3 sensor material with three-dimensional structure as well as preparation method and application of same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A kind of anti-moisture nanometer Zn-In 2 o 3 A method for preparing a three-dimensional structure sensor material, comprising the following steps:

[0036] 1) Prepare a mixed solution with 13 mL absolute ethanol and 3 mL glycerin.

[0037] 2) Add 0.3 g of indium chloride into the above mixed solution, stir to dissolve evenly, and form mixed solution 1;

[0038] 3) Disperse 0.2 g of zinc acetate in a mixed solution of 13 mL of absolute ethanol and 5 mL of sodium hydroxide (0.3 mmol / L) to form a mixed solution II;

[0039] 4) Mix the two mixed solutions obtained above evenly and put them into a 50 mL polytetrafluoroethylene substrate, and perform a solvothermal reaction at 170°C for 8 hours;

[0040] 5) After collecting, washing, and drying the reacted materials, put the powder in a muffle furnace for sintering at 500°C for 2 hours to obtain a yellow powder, which is Zn-In 2 o 3 Nanostructured materials (denoted as Zn / In2 o 3 (1 / 1));

[0041] The prepared Zn-In 2...

Embodiment 2

[0043] Same operation as Example 1, the difference is: the mol ratio of indium chloride and zinc acetate is 2 / 1, the concentration of sodium hydroxide solution is 0.1mmol / L, and the volume ratio of dehydrated alcohol and glycerol mixed solution is 10 , the hydrothermal time is 24h, and the reaction temperature is 100°C (denoted as Zn / In 2 o 3 (1 / 2)).

[0044] Adopt SEM to characterize the morphology of the prepared sample in this embodiment, as image 3 shown.

Embodiment 3

[0046] Same operation as Example 1, the difference is that the molar ratio of indium chloride and zinc acetate is 1 / 2, the concentration of sodium hydroxide solution is 1mmol / L, the volume ratio of absolute ethanol and glycerin mixed solution is 2, hydrothermal The time is 2h, and the reaction temperature is 200°C. (denoted as Zn / In 2 o 3 (2 / 1)).

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Abstract

The invention discloses a moisture-resistant nano Zn-In2O3 three-dimensional structure sensor material as well as a preparation method and application of same. Herein, Zn / In with different molar ratios is used as a precursor, glycerol and ethanol are used as solvent phases, the regulation effect of Zn 2+ on an In2O3 nano structure is utilized, and a high-temperature and high-pressure solvothermalreaction is adopted to prepare the moisture-resistant nano Zn-In2O3 three-dimensional structure sensor material. The Zn-In2O3 three-dimensional nanostructure with three structures such as a carambola-shaped structure, a snow cake-shaped structure and a shuttle-shaped structure is prepared in one step, and the Zn-In2O3 three-dimensional nanostructure is prepared into a gas sensor due to the structural characteristics and rich oxygen vacancies of the Zn-In2O3 three-dimensional nanostructure and is excellent in performance when being applied to detection of ethanol gas materials under high humidity. In addition, the sensor structure adopted by the invention is composed of a Zn-In2O3 semiconductor sensitive material coated on an Al2O3 insulating ceramic tube, a nickel-chromium alloy heating wire and a heater, so that the sensor structure is simple in manufacturing process, is suitable for mass production, and has a wide application prospect in the aspect of detecting ethanol under low concentration and high humidity.

Description

technical field [0001] The invention relates to the technical field of materials for detecting high-humidity ethanol gas, in particular to a moisture-resistant nano Zn-In 2 o 3 Three-dimensional structured sensor materials and their preparation methods and applications. Background technique [0002] Metal oxide semiconductor gas sensors are widely used in the detection of VOC gases due to their high detection sensitivity, fast response recovery, simple operation, and low price. Common representative semiconductor oxides are WO 3 , ZnO, In 2 o 3 , SnO 2 etc., where In 2 o 3 It has high electrical conductivity, which is almost the highest among the above-mentioned representative semiconductor oxide sensing materials. However, low sensitivity, long response and recovery time, and poor stability are the bottlenecks hindering the development of metal oxide semiconductor gas sensors. In addition, in high humidity environments, In 2 o 3 The above-mentioned problems of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 张文惠杜帅航王国乾丁素军岳鹿关荣锋许宁
Owner YANCHENG INST OF TECH
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