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Electronic device

An electronic device and electrode technology, applied in the field of electronic devices, can solve the problem of distinguishing high voltage from low voltage, and achieve the effects of reducing interaction, reducing resistance, and reducing parasitic effects

Inactive Publication Date: 2006-03-01
KONINKLIJKE PHILIPS ELECTRONICS NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This margin is often so small that it is difficult to distinguish high voltage from low voltage

Method used

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Embodiment 1

[0035] Example of Embodiment 1

[0036] The inverter 10 shown in FIG. 1 includes a first field effect transistor 11 and a second field effect transistor 12 . The inverter 10 includes an electrically insulating substrate 1 . On the substrate 1 there is a first electrode layer 2 and a second electrode layer 3 . In the first electrode layer 2 , source electrodes 21 , 21 ′ and drain electrodes 22 , 22 ′ are defined, the electrode pairs 21 , 22 and 21 ′, 22 ′ being separated from each other by channels 23 , 23 ′, respectively. In the second electrode layer 3, gate electrodes 24, 24' and interconnections 25 interconnecting them are defined. In a vertical projection of the gate electrode 24 on the first electrode layer 2 , the gate electrode 24 substantially overlaps the channel 23 . Furthermore, an intermediate layer 4 and an active layer 5 are present.

[0037] The above-mentioned layers 2 , 3 , 4 , 5 appear on the substrate 1 in the order of the second electrode layer 3 , the ...

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Abstract

The electronic device comprises an inverter having a first and a second fieldeffect transistor with an active layer comprising a first organic semiconductor material of the first conductivity type and a second organic semiconductor material of the second conductivity type. The active layer can be provided from a solution, for instance in that it is a blend of two materials.

Description

technical field [0001] The invention relates to an electronic device comprising first and second field effect transistors having source and drain electrodes separated from each other by an active layer comprising an organic material for the first and second transistors is common, where there is a gate electrode separated from the active layer by a dielectric layer. [0002] Furthermore, the present invention relates to a method of manufacturing an electronic device comprising first and second field effect transistors having a common active layer comprising an organic P-type semiconductor material, the active layer being passed through a solution coated on the substrate. Background technique [0003] The device and the method are known from WO-A 99 / 10939. This known device comprises a field effect transistor made entirely of organic materials. Source and drain electrodes are located in the first conductive layer, and gate electrodes are located in the second conductive lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H10N10/856G06F1/00H01L27/28H01L51/00H01L51/40
CPCH01L51/0516B82Y10/00H01L51/005H01L51/0083H01L51/0545H01L51/0038H01L27/283H01L51/0039H01L51/0566H01L51/0046H01L51/0058H01L51/0065H10K19/10H10K85/115H10K85/114H10K85/211H10K85/60H10K85/626H10K85/653H10K85/331H10K10/468H10K10/488H10K10/466
Inventor D·M·德里尤E·J·梅杰S·塞塔耶斯
Owner KONINKLIJKE PHILIPS ELECTRONICS NV