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Nitride stacked crystal layer structure and its producing method

A technology of nitride epitaxy and manufacturing method, applied in laser parts, semiconductor lasers, electrical components, etc., can solve the problems of high density, shortened life, and low ESD withstand voltage of components

Active Publication Date: 2006-03-22
FORMOSA EPITAXY INCORPORATION +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large difference between the lattice constant of gallium nitride and the lattice constant of the substrate, the defect density of gallium nitride formed by using this low-temperature buffer layer is as high as 1010 / cm3 or more
The light-emitting diode buffer layer structure made of such gallium nitride material will make the ESD withstand voltage of the element too low, resulting in a shortened life span and deterioration of the element characteristics.

Method used

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  • Nitride stacked crystal layer structure and its producing method
  • Nitride stacked crystal layer structure and its producing method

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Embodiment Construction

[0020] The preferred embodiments of the present invention will be further described in detail below with reference to the accompanying drawings. The ratio of certain dimensions relative to other parts is exaggerated to provide a clearer description and to help those skilled in the art to understand the present invention.

[0021] figure 1 Shown is a preferred embodiment of the nitride epitaxial layer structure of the present invention, figure 2 shown as figure 1 A flowchart of specific implementation steps of the nitride epitaxial layer structure.

[0022] refer to figure 1 As shown, it is a nitride epitaxial layer structure formed by stacking a first interposer 102, a second interposer 103 and a nitride epitaxial layer 104 sequentially on a substrate 101. The first interposer 102 and the second intermediary layer 103 are used to improve the quality of materials for subsequent attachment. Among them, refer to figure 2 As shown, the steps include: step 201, using epitax...

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Abstract

This invention relates to a crystal-lamination layer structure of a nitride and its processing method. The structure includes a base plate as the backing, a first medium layer formed on the backing by laminating suitable thickness of high temperature Al1-x-yGaxInyN, a second medium layer formed on the first medium layer by laminating suitable thickness of re-crystallized Al1-x-yGaxInyN and a nitride crystal-lamination layer formed on the second medium layer by laminating nitride crystal-lamination layer.

Description

technical field [0001] The present invention relates to a structure of a nitride epitaxial layer and a manufacturing method thereof, in particular to a special structure of an intermidium layer and a manufacturing method thereof. Background technique [0002] The traditional gallium nitride (GaN) is a light-emitting diode buffer layer structure. A buffer layer (buffer layer) is formed on a substrate, and a gallium nitride-based nitride epitaxial layer is formed on the buffer layer. Generally, this type of buffer layer is deposited using a low-temperature (200-900°C) AlxGa1-xN or low-temperature InxGa1-xN material, and then forms high-temperature gallium nitride to form its nitride epitaxy layer. However, due to the large difference between the lattice constant of gallium nitride and the lattice constant of the substrate, the defect density of gallium nitride formed by using this low-temperature buffer layer is as high as 1010 / cm3 or more. The light-emitting diode buffer la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/00H01L33/04H01L33/32
Inventor 温子稷涂如钦游正璋武良文简奉任
Owner FORMOSA EPITAXY INCORPORATION