Shift register circuit

A shift register circuit, shift register technology, applied in static memory, digital memory information, instruments, etc., can solve problems such as incorrect output of displayed images and inability to fully maintain output signals

Active Publication Date: 2006-05-03
AU OPTRONICS CORP
View PDF0 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be found from the curve 32 that after a long time of use of the existing shift register, the output signal cannot b

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shift register circuit
  • Shift register circuit
  • Shift register circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Figure 4 is a schematic diagram of a shift register according to a first embodiment of the present invention picture . In the first embodiment, the first pull-down module 41 and the second pull-down module 42 are used to alternately couple the output signal N of the shift register to the low voltage source VSS to maintain the output signal N in an off state. The gate of the transistor T41 and its first source / drain are coupled to the output signal (N−1) of the preceding shift register and the first pull-down module 41 . The second source / drain of the transistor T41 is coupled to the gate of the transistor T42. The first source / drain of the transistor T42 is coupled to a first clock signal CLK, and the second source / drain of the transistor T42 is coupled to the first pull-down module 41 , the second pull-down module 42 and the output signal N of the shift register. The first pull-down module 41 and the second pull-down module 42 are respectively coupled to the first c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a shift register circuit, which possesses a plurality of series-connected stage shift register including a first transistor with the grid and the first resource/leakage connecting with output signal of the front stage register. The second transistor with the grid is connected with the second resource/leakage electrode of the first transistor; the first resource/leakage electrode is connected with a first clock signal, the second resource/leakage electrode is connected with the output end of the second resource/leakage electrode. The first lower module is coupled with the output end and the first clock signal; when the output signal and the first clock signal of the front stage shift register are connected with the low voltage level, it coupled with the first voltage level. The second lower module is coupled with the output end and the second clock signal; when the output signal and the second clock signal of the front stage shift register are connected with the low voltage level, it coupled with the first voltage level.

Description

technical field [0001] The invention relates to a driving circuit of a liquid crystal display, in particular to a driving circuit of a shift register in the driving circuit of a liquid crystal display. Background technique [0002] Designing the driving circuit on the glass substrate of the liquid crystal display panel has become a main technology of the future liquid crystal display, and its biggest advantage lies in saving the cost of the driving IC. For thin film transistor displays, the process of amorphous silicon has become the mainstream at present, but for amorphous silicon thin film transistors, its instability, such as the voltage shift of the threshold voltage, has become the biggest problem in circuit design. Please refer to figure 1 , figure 1 It is a schematic representation of the voltage and current of a 300um process thin film transistor at 80°C and different operating times picture . Curves 11, 12, 13, 14 and 15 are the voltage and current curves of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C19/28G09G3/36
Inventor 魏俊卿吴仰恩林威呈
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products