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Trench mosfet and method of manufacturing same

A manufacturing method and groove-type technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased production cost, complicated manufacturing process, and reduced production efficiency, and achieve the effect of improving breakdown voltage

Inactive Publication Date: 2006-05-03
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] (c) Increasing the breakdown voltage requires a special groove shape and / or an additional process, which leads to complex manufacturing processes, increased production costs, and reduced production efficiency

Method used

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  • Trench mosfet and method of manufacturing same
  • Trench mosfet and method of manufacturing same
  • Trench mosfet and method of manufacturing same

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Experimental program
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Embodiment approach 1

[0034]The trench MOSFET of this embodiment is a trench MOSFET formed on a semiconductor substrate, including: a highly doped drain part, a low doped drain part (drift part), a channel body part, a high doped drain part, Impurity source part, MOSFET gate sensing channel, trench part. The above-mentioned highly doped drain portion is of the first conductivity type (P-type in this embodiment), and is formed on a semiconductor wafer (in this embodiment, the entire device forming a channel-type MOSF is referred to as a "semiconductor wafer", or 'wafer'). The low-doped drain portion is of the first conductivity type and is made to be in contact with the high-doped drain portion, and the channel body portion is of the second conductivity type (N-type in this embodiment) and is formed on the low-doped drain portion. Between the doped part and the source part. The highly doped source portion is of the first conductivity type, and is formed on the uppermost surface of the semiconducto...

Embodiment approach 2

[0058]Hereinafter, a trench MOSFET according to Embodiment 2 of the present invention will be described with reference to the drawings. In the embodiments of the present invention, members having the same functions as those described in the above-mentioned embodiments are given the same reference numerals, and their descriptions are omitted.

[0059] FIG. 2 is a cross-sectional view showing a schematic configuration of a trench MOSFET according to the present embodiment. As shown in the figure, the trench MOSFET of this embodiment differs from the above-mentioned embodiment only in that the lower electrode 15 is formed below the gate electrode 5 in the trench portion 6, and the other configurations are the same as those of the reference figure 1 Same as explained.

[0060] The gate electrode 5 in the trench portion 6 controls the channel induction of the body portion 3 , and the lower electrode 15 controls the drift portion, that is, the epitaxial layer 2 . In the trench MO...

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Abstract

The present invention discloses a trench type MOSFET, in which a P-type highly doped drain part is a substrate, a P-type low-doped drain part is an epitaxial layer, an N-type body part, and a P-type source A trench portion is formed on the semiconductor substrate on which the diffusion portion is adjacently formed. Further, in a state of being insulated from the trench portion, the source diffusion portion is formed to cover the trench portion, thereby reducing ON resistance of the trench MOSFET.

Description

technical field [0001] The present invention relates to a structure of a semiconductor device and a manufacturing method thereof, in particular to a trench (trench) type MOSFET (Metal Oxide MOSFET) useful for a DC-DC converter or a power supply device such as a high-side load drive (high-side load drive). Semiconductor Field Effect Transistor) and its manufacturing method. Background technique [0002] Conventional vertical trench MOSFETs (hereinafter referred to as trench MOSs) are widely used as electronic devices for power supply control due to their high structural efficiency and low ON resistance characteristics. . [0003] 8(a) to (f) are cross-sectional views showing the manufacturing process of typical conventional N-channel and trench MOSFETs (for example, Krishna Shenai, 'Optimized Trench MOSFET Technologies for Power Devices', IEEE Transactions on Electron Devices, vol, 39, no, 6, p1435-1443, June 1992). Here, (a) breakdown voltage (hereinafter abbreviated as '...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/165H01L29/407H01L29/42356H01L29/66734H01L29/7813H01L21/18
Inventor A·O·阿丹
Owner SHARP KK