Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby

Abstract

The present invention provides a technique for producing high-quality single crystals at a high growth rate. The invention provides a method for growing a silicon single crystal by the Czochralski single crystal growth method, that is, when measuring the temperature gradient of the silicon melt along an axis parallel to the radial direction of the single crystal, the measured maximum temperature gradient It is called ΔTmax, the minimum temperature gradient is called ΔTmin, and the silicon single crystal is grown by satisfying the condition of {(ΔTmax-ΔTmin) / ΔTmin}×100≤10.

Description

technical field [0001] The present invention relates to a method for growing high-quality silicon single crystals, more specifically, when growing silicon single crystals by the Czochralski single crystal growth method, controlling the temperature distribution of the silicon melt to make high-quality silicon single crystals A method and device for growing a crystal block and a silicon wafer manufactured therefrom. Background technique [0002] Now, in order to increase the yield of semiconductor elements and grow high-quality silicon single crystal ingots, it is mainly to control the temperature distribution in the high temperature region of the crystallized single crystal ingots. This is to control the stress caused by shrinkage due to cooling after crystallization, or the behavior of point defects during solidification. [0003] Generally, in the method of growing a silicon single crystal ingot by the Czochralski single crystal growth method, polycrystalline silicon is lo...

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Problems solved by technology

The first is that in order to achieve the purpose of high-quality silicon single crystal, there are many restrictions

For example, in U.S. Patent No. 6,287,380, the concentration of point defects is reduced by making supersaturated point defects fully diffuse in the high-temperature region before the growth of crystal defects, but because it takes more than 16 hours to maintain the temperature, there are It is possible only in theory, but not in practical application

[0012] The second is that most of the cases did not cite substantive effects

By the method proposed in Japanese Patent Application Flat 5-61924 and Eidenzon et al. (Defect-free Silicon Crystals Grown by the Czochralski Technique, Inorganic Materials, Vol.33, No.3, 1997, pp.272-279), the crystal The drawing speed changes periodically, and grows into a 200mm silicon single crystal ingot. As a result, it fails to achieve high quality, rather it exposes the instability of the process.

[0013] The third is that inventions based on solid phase reaction theory cannot achieve high productivity

However, in U.S. Registration Nos. 5,919,302 and 6,287,380, with the morphology of the solid-liquid interface claimed by the above invention, single crystals of sufficient quality may not be obtained

[0015] In addition, the aforementioned prior art has low productivity for the purpose of obtaining high-quality single crystals

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