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Magnetic resistance type random access memory and manufacture method thereof

A technology of random access memory and manufacturing method, which is applied to the manufacturing/processing of electromagnetic devices, static memory, digital memory information, etc., and can solve the problems of increasing the overall height of integrated circuits and complex manufacturing processes.

Active Publication Date: 2010-05-12
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, under the current process technology, such a configuration will lead to a rather complicated process
Adjusting the MRAM stack to a vertical form also increases the overall height of an integrated circuit or other component that incorporates the MRAM stack

Method used

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  • Magnetic resistance type random access memory and manufacture method thereof
  • Magnetic resistance type random access memory and manufacture method thereof
  • Magnetic resistance type random access memory and manufacture method thereof

Examples

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Embodiment Construction

[0037] A number of embodiments are presented below to implement the various features of the invention. The following will give examples of specific components or configurations to simplify the description of the present invention, which is of course only for the sake of illustration rather than limiting the scope of the present invention. In addition, the present invention will also refer to numbers or letters repeatedly in the embodiments. This is done for simplicity and clarity and does not convey a relationship between the various embodiments discussed and / or configurations thereof. In addition, the description will describe the situation where the first special object is formed on the second special object. It may be the case where the first special object is in direct contact with the second special object, or it may be that other special objects are formed and interspersed between the first and second special object. Between special objects, so that the first and second...

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PUM

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Abstract

The invention provides a MRAM and manufacture method thereof, wherein the device includes a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby is also oriented at the acute angle relative to the substrate. The MRAM stack comprises a plurality of substantially planars, parallel layers each oriented at an acute angle relative to the substrate. The invention increases the unit density of the IC including MRAM stack by means of changing the parallel direction of the MRAM laminate when coupling the finite area of the MRAM stack.

Description

technical field [0001] The present invention relates to a semiconductor element, in particular to a magnetoresistive random access memory element and its manufacturing method. Background technique [0002] A magnetoresistive random access memory (Magnetic Random Access Memory, hereinafter referred to as MRAM) includes an MRAM stack (stack), which has a dielectric layer interspersed with a pinned magnetic layer (pinned magnetic layer) and a free magnetic axis layer (free magnetic layer). Each MRAM stack layer is substantially planar and parallel to an interface on which the MRAM element is formed. However, the parallel orientation of the MRAM stacks and the size of the area intended to be bonded to the MRAM stacks (i.e., the side dimensions of each MRAM stack) limit the cell density of integrated circuits and other devices incorporating MRAM stacks. . [0003] If the MRAM stacks are made perpendicular to the substrate, the cell density will naturally increase. However, un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15H01L43/00H10B12/00
CPCH01L43/08B82Y10/00H01L27/228G11C11/15H10B61/22H10N50/01H10N50/10
Inventor 刘继文江国庆曾鸿辉邓端理
Owner TAIWAN SEMICON MFG CO LTD