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Inductive coupling coil and inductive coupling plasma apparatus thereof

A technology of inductively coupled coils and coils, applied in the directions of plasma, coils, inductors, etc., can solve the problems of difficulty in plasma density, increase in volume, uneven etching rate, etc., to improve distribution uniformity, improve quality, Uniform effect in radial and azimuthal directions

Active Publication Date: 2006-08-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The volume of the reaction chamber 4 also increases accordingly. It is very difficult to achieve a uniform plasma density by diffusion. Therefore, most of the current etching equipment has the problem of uneven etching rate, which has a great impact on the semiconductor manufacturing process. had a great adverse effect on

Method used

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  • Inductive coupling coil and inductive coupling plasma apparatus thereof
  • Inductive coupling coil and inductive coupling plasma apparatus thereof
  • Inductive coupling coil and inductive coupling plasma apparatus thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Such as image 3 As shown, the inner coil group of the inductively coupled coil includes three single-turn coils 7 with different diameters, and each single-turn coil 7 is connected in parallel; the outer coil group is a group of helical coils 8 formed by connecting three coils with different diameters in series. The internal coil group is connected in parallel with the external coil, and the two ends of the parallel connection are respectively the input end or the output end, and the output end is connected to a grounding capacitor.

Embodiment 2

[0031] Such as Figure 4 As shown, the inner coil group of the inductively coupled coil includes three single-turn coils 7 with different diameters, and each single-turn coil 7 is connected in parallel; the outer coil group is a single-turn coil 7, and the inner coil group is connected in series with the outer coil group. The two ends of the series are respectively the input end or the output end, and the output end is connected to a grounding capacitor.

Embodiment 3

[0033] Such as Figure 5 As shown, the inner coil group of the inductively coupled coil includes three single-turn coils 7 of different diameters, and each single-turn coil 7 is connected in parallel; the outer coil group includes three single-turn coils 7 of different diameters, and each single-turn coil 7 is connected in parallel. The inner coil group is connected in series with the outer coil, and the two ends of the series are respectively the input end or the output end, and the output end is connected to a grounding capacitor.

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Abstract

This invented inductance couple coil is formed by an inner coil set connected with an outer coil set, one of which is composed of two parallel coils in different diameters in which, this kind of inductance couple plasma device reduces the inductance of the coil so as to get large areas of plasma and improve its uniformity and the distribution of plasma becomes more uniform at radial and azimuth angle direction by connecting a ground condenser at the output end of the coil, further more, the design of inner and outer plane coils improves the distribution of plasma in the reaction chamber so that the etching rates at the points of the surface of the wafer get more close.

Description

technical field [0001] The invention relates to an accessory for semiconductor wafer processing equipment, in particular to an inductively coupled coil and an inductively coupled plasma device. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in fabrication processes for fabricating integrated circuits (ICs) or MEMS devices. Among them, inductively coupled plasma (ICP) is widely used in etching and other processes. Under low pressure, the reactive gas is excited by radio frequency power to generate ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active reactive groups and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F5/00H01F38/14H05H1/46H05H1/50H01L21/3065
Inventor 宋巧丽
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD