Modulator integrated semiconductor laser device
A technology of laser devices and semiconductors, applied in the fields of semiconductor lasers, semiconductor laser excitation devices, laser parts, etc., can solve the problems of unsuitable laser TV, low output power, and difficulty in constructing laser oscillation structures.
Inactive Publication Date: 2006-08-23
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
[0010] However, although VCSELs are commonly used in optical communications, since VCSELs generally have low output power (several milliwatts), they are not suitable for laser TVs, which require lasers with powers of at least several hundred milliwatts
In addition, the modulation layer 27 placed inside the cavity of the VSCEL does not contribute to the oscillation of the VSCEL, thereby reducing the efficiency of the laser
Therefore, it is difficult to construct this laser with an efficient oscillation structure
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[0034] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown
[0035] Example.
[0036] because Figure 4 The VCSEL shown has a low output power of a few milliwatts, so it is not suitable for laser TVs, which require lasers with output powers of at least a few hundred milliwatts. Furthermore, modulators inside the cavity do not help the laser to oscillate, thus reducing the overall efficiency of the laser.
[0037] Therefore, if Figure 5 As shown, the present invention provides a modulator-integrated semiconductor laser device using a VECSEL with high output power. Typically, a VECSEL is capable of producing an output power of at least a few hundred milliwatts by enlarging the gain region through an external mirror. According to the present invention, a modulator designed to facilitate oscillation is integrated in a high power VECSEL to eliminate the above-mentioned pro...
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A modulator integrated semiconductor laser device is provided. In the modulator integrated semiconductor laser device, a lower DBR (distributed Bragg reflector) layer is formed on the substrate, an active layer is formed on the lower DBR layer and includes a plurality of barrier layers alternating with a plurality of quantum well layers, and an external mirror is spaced apart from a top of the active layer to output a portion of light emitted from the active layer by transmission and to reflect the remainder to the active layer. Two of the plurality of barrier layers that contact both sides of at least one of the plurality of quantum well layers are doped with different types.
Description
technical field [0001] The present invention relates to a semiconductor laser device integrated with a modulator, more specifically, to a semiconductor laser device integrated with a modulator, in which at least one quantum well layer is shared with the modulator by doping part of the barrier layer. Background technique [0002] Lasers are widely used as light emitting devices for many applications, such as printers, scanners, medical equipment, optical communication equipment, and laser televisions. A laser generates a digital signal by periodically varying its output power. This operation is known as modulation, and high-frequency modulation is especially used in optical communications. [0003] There are various methods of modulating the optical output power of a laser to a high frequency. In direct modulation, the current applied to the laser device is varied for high frequency modulation. In another approach, the laser device oscillates continuously while a separate ...
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IPC IPC(8): H01S5/10H01S5/32H01S5/34H01S5/026H01S5/04H01S5/00
CPCH01S3/109H01S5/041H01S5/141H01S5/18383H01S5/18302H01S5/0601H01S5/187H01S5/34
Inventor 金泽
Owner SAMSUNG ELECTRONICS CO LTD