Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response

A semiconductor and substrate technology, applied in the field of image sensors, can solve problems such as difficulty in collecting electrons, and achieve the effect of reducing the energy band width and increasing the absorption coefficient

Active Publication Date: 2006-09-06
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, even at 700nm, it is difficult for the photodiode to collect the electrons generated by the 700nm photons

Method used

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  • Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response
  • Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response
  • Multilayered semiconductor substrate and image sensor formed thereon for improved infrared response

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Embodiment Construction

[0021] In the following description, numerous specific details are provided in order to provide a thorough understanding of embodiments of the invention. One skilled in the art will recognize, however, that the invention can be practiced without one or more of these specific details, or that the invention can be practiced with other methods, elements, etc. In addition, well-known structures and operations are not shown or described in detail in order to clearly describe the various embodiments of the present invention.

[0022] In the description of the present invention, when referring to "an embodiment" or "a certain embodiment", it means that the specific features, structures or characteristics described in this embodiment are included in at least one embodiment of the present invention. Thus, appearances of "in an embodiment" or "in a certain embodiment" in various places in the specification do not necessarily refer to all belonging to the same embodiment; manner combine...

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Abstract

An image sensor is formed on a multilayered substrate to improve infrared response. The multilayered substrate uses a silicon-germanium alloy to improve infrared response. In one embodiment, the silicon-germanium alloy has a germanium concentration gradient such that an upper portion of the silicon-germanium alloy has a lower germanium concentration than a lower portion of said silicon-germanium alloy.

Description

technical field [0001] The present invention relates to image sensors, and more particularly, the present invention relates to an image sensor formed on a multilayer semiconductor substrate. Background technique [0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, cellular phones, security cameras, medical equipment, automobiles, and other applications. The technology of manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors continues to develop rapidly. [0003] However, current image sensors have very poor sensitivity in the wavelength range of 700nm to 1000nm. This wavelength range is roughly in the infrared region of the electromagnetic spectrum. Both CCD (Charge Coupled Device) image sensors and CMOS image sensors suffer from this low sensitivity. This is brought about by the specific characteristics of silicon semiconductor technology. Specifically, silicon has an energy band gap o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/0312
CPCH01L31/028H01L27/14649H01L31/1037H01L27/14609Y02E10/547
Inventor 霍华德·E·罗德斯
Owner OMNIVISION TECH INC
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