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Method of realizing continuous scanning to explore two patterns by using two mask plates

A technology of pattern exposure and reticle, applied in the field of lithography exposure

Inactive Publication Date: 2010-11-03
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The advantage of this method is that no other changes are required in the lithography machine system except that the mask clamp needs to be slightly modified; the disadvantage is that the mask manufacturing must be adjusted accordingly from equipment to process

Method used

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  • Method of realizing continuous scanning to explore two patterns by using two mask plates
  • Method of realizing continuous scanning to explore two patterns by using two mask plates
  • Method of realizing continuous scanning to explore two patterns by using two mask plates

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Embodiment Construction

[0048] Now in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail:

[0049] The invention uses two common reticles to form a new reticle system.

[0050] see figure 1 , figure 1 It is a top view of the new reticle system, including a first reticle 1 , a second reticle 2 and a fixing and adjusting system 3 . The first reticle 1 is a common reticle with a fixed position, and the second reticle 2 is a common reticle with an adjustable position. The first reticle 1 and the second reticle 2 are clamped by the reticle fixing and adjusting system 3 Hold, one side of the first reticle 1 and the second reticle 2 are in contact with each other.

[0051] see figure 2 , figure 2 is a perspective view of the new reticle system. The horizontal position of the second reticle 2 can be different from that of the first reticle 1, and the second reticle 2 can be higher than, equal to, or lower than the first reticle 1, ...

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Abstract

The invention is a method for using two masks to expose two patterns by continuous scanning, fixing a first mask with a first exposure pattern and adjusting a second mask with a second exposure pattern to connect the two masks together, making the two masks do long-distance scanning motion to complete exposing the first exposure pattern, making the masks do variable motion as scanning space between the two exposure patterns to implement accurate distance between the two scanned patterns on a silicon wafer, and finally completing exposing the second exposure pattern. And it can directly use ordinary masks and reduce the time necessary for two exposures.

Description

technical field [0001] The invention relates to a photolithography exposure technology of integrated circuit manufacturing process, in particular to a method for using two reticles to carry out scanning motion to realize continuous scanning and exposure to two patterns. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, the minimum line width of transistors has been continuously reduced, and the continuous reduction of characteristic line width has led to a significant increase in chip integration, but it has also brought great challenges to the optical lithography process. [0003] In order to adapt to the reduction of line width and the improvement of integration, optical lithography technology has been continuously improved: from contact exposure to proximity exposure, and then to reduced projection exposure; the wavelength of the exposure light source is from 430nm of G line to 365nm of I line, to 248nm of KrF an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
Inventor 姚峰英
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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