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Graytone mask and film transistor substrate manufacturing method

A gray-tone mask and substrate technology, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, and photolithography on patterned surfaces, etc. Issues with marker correlation offsets, etc.

Inactive Publication Date: 2006-09-27
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case where it is desired to form the semi-transmissive portion from the semi-transmissive film, different photolithography processes must be employed in the processing of the semi-transmissive film and the processing of the light-shielding film.
In this way, when performing the second drawing, although alignment measures are taken so that the second drawing is performed without causing a pattern deviation from the first drawing, the alignment accuracy is limited, and it is difficult to completely eliminate the alignment deviation.
Therefore, although the part corresponding to the part where the source electrode and / or the drain electrode overlaps the device pattern formed by using another mask is a semi-transparent part, if a mark related to the device pattern is formed when processing the light-shielding film, If the position is shifted in the second drawing, the relationship between the mask pattern and the mark will be shifted

Method used

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  • Graytone mask and film transistor substrate manufacturing method
  • Graytone mask and film transistor substrate manufacturing method
  • Graytone mask and film transistor substrate manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0064] figure 1 (a) is a plan view of the gray tone mask 20 of this embodiment, (b) is a plan view showing a pattern 30 near the source electrode and the drain electrode on the TFT substrate, and (c) is a plan view showing the resist formed on the replicated substrate. Top view of the etchant pattern.

[0065] like figure 1 As shown in (b), in this embodiment, the light-shielding portion 22 in the pattern 30 is used as the opposing portion of the source electrode and the drain electrode, and is formed corresponding to the region adjacent to the channel portion, and the remaining portions of the source electrode and the drain electrode are composed of The semi-transparent portion 21 is formed, and the channel portion between the source electrode and the drain electrode is formed by the light-transmitting portion 23 . On the substrate to be replicated, in the case of a positive type resist, the light-shielding portion 22 forms a thick resist pattern 42 , and the semi-transpa...

Embodiment approach 2

[0084] Figure 4 It is a plan view of the gray tone mask 20 of embodiment. Outside the device pattern area, there are mark patterns 31 related to contact holes and mark patterns 32 related to gate electrodes. In addition, the top view showing the pattern near the source electrode and the drain electrode on the TFT substrate and the top view showing the resist pattern formed on the replicated substrate are different from the above-mentioned figure 1 are the same, so their illustrations are omitted.

[0085] Next, use Figure 5 and Image 6 A method of manufacturing the above-mentioned gray tone mask will be described.

[0086] Prepare the mask blank 10 used in Embodiment 1 (see Figure 5 (a)).

[0087] Then, on the mask blank 10, apply a positive type resist for drawing and bake to form a resist film 4 for forming a light semi-transmissive film pattern (refer to Figure 5 (b)). Next, drawing is performed with an electron beam drawing machine, a laser drawing machine, o...

Embodiment approach 3

[0098] Embodiment 3 Compared with the above-mentioned gray tone masks of Embodiments 1 and 2 in which a light-shielding film pattern is formed on a light-semi-transmissive film pattern, and the light-shielding portion is formed by a light-semi-transmitting film and a light-shielding film thereon, as described later Figure 9 As shown in (i), the gray-tone mask is a gray-tone mask 20 in which a light-shielding film pattern 2d is formed on a light-shielding film pattern 3d, and the light-shielding portion is formed of a light-shielding film and a light-shielding film thereon. Figure 7 It is a plan view of the gray tone mask 20 of this embodiment, except that the top and bottom of the light-shielding film pattern and the light-transmitting film pattern in the light-shielding part are reversed, for example, the same as figure 1 same. In addition, the top view showing the device pattern near the source electrode and the drain electrode on the TFT substrate and the top view showin...

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Abstract

The invention provides a gray tone mask provided with accurate marks related to a gate electrode, a contact hole and the like and formed so as to have an overlapping part of a device pattern formed by using the gray tone mask and a device pattern formed by using an another photo mask. The gray tone mask has a mask pattern which corresponds to a first device pattern 30 and whose region on the graytone mask 20 corresponding to the overlapping part of the first device pattern 30 and a second device pattern is a translucent part, and a mark pattern 31 formed simultaneously with formation of the translucent part of the mask pattern and related to the second device pattern. The mask pattern and the mark pattern 31 are used for manufacturing a substrate to be transferred having the first devicepattern 30 formed by using the gray tone mask 20 and the second device pattern e.g. the contact hole H etc. formed by using an another photo mask so as to have the overlapping part with the first device pattern 30.

Description

technical field [0001] The present invention relates to a gray tone mask that is appropriately used for thin film transistor substrates (hereinafter referred to as TFT substrates) and the like used in the manufacture of thin film transistor liquid crystal displays (Thin Film Transistor Liquid Crystal Displays), and films using the gray tone mask Manufacturing method of transistor substrate. Background technique [0002] Compared with CRT (Cathode Ray Tube), TFT-LCD has the advantages of being easy to form thin and having low power consumption, and commercialization is rapidly progressing at present. TFT-LCD has a TFT substrate with a structure in which TFTs are arranged on each pixel arranged in a matrix, and a color filter layer in which red, green, and blue pixel patterns are arranged corresponding to each pixel overlaps in the case of intervening a liquid crystal phase. together the general structure. In TFT-LCD, the number of manufacturing steps is large, and only 5 to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00H01L21/027G02F1/136G02F1/1368G03F1/54G03F1/68
CPCG03F1/36H01L29/786
Inventor 佐野道明
Owner HOYA CORP
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