Non-volatile memory, its production and operation

A non-volatile, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as affecting adjacent memory cells, and achieve the effect of improving reliability
CN1855499AInactive Publication Date: 2006-11-01POWERCHIP SEMICON CORP
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
POWERCHIP SEMICON CORP
Publication Date
2006-11-01
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The well region of the non-volatile memory cell is formed at a substrate. A shallow well region is formed at said well region. At least two gate stacks are located on the substrate. The drain region is formed in the gate stack proximate the outer edge of said shallow well. The auxiliary gate layer is formed on the substrate between said two gate stacks, and passes through partial substrate. The dielectric layer is formed between said dielectric layer and substrate and between said auxiliary gate layer and gate stacks. The conducting plug is formed on said substrate, and extended down to said shallow well and said drain region therein.
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Description

technical field

[0001] The present invention relates to a memory element, its manufacturing method and its operating method, in particular to a non-volatile memory, its manufacturing method and its operating method. Background technique

[0002] Non-volatile memory has been widely used in personal computers and electronic devices due to its advantages that data can be stored, read, and erased multiple times, and the stored data will not disappear after power failure. a memory element.

[0003] A typical non-volatile memory uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). When the non-volatile memory element is programmed or erased, an appropriate voltage is applied to the source region, the drain region, and the control gate to inject electrons into the floating gate, or to remove electrons from the floating gate. Set the gate to pull out. Generally speaking, the charge injection modes commonly used in non-volatile memories...

Claims

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