Method for mfg. metal silicide

Abstract

This invention relates to one metal silicide manufacturing method. This invention is used to metal silicide technique. It is used to deposition anti heat metal layer and the layer is first back fired and the unreacted metal is eliminated. Species injection technique is done to inject the species into the metal silicide to destroy lattice structure in the metal silicide, that is done to avoid spiking and lateral diffusion brought by high temperature of the metal silicide when the second back fire, and the junction leakage problem generated is also avoided.

Description

technical field [0001] The present invention relates to a method for forming a metal silicide, in particular to a method for manufacturing a self-aligned-silicide (salicide). Background technique [0002] In semiconductor technology, a metal-oxide-semiconductor (MOS) transistor is composed of three electrodes including a gate, a source and a drain. The early MOS was composed of three layers of materials such as a metal layer, a silicon dioxide layer and a silicon substrate. However, since most metals have poor adhesion to silicon dioxide, polysilicon, which has better adhesion to silicon dioxide, has been proposed to replace the metal layer. However, the use of polysilicon has a problem that the resistance value is too high. Even if polysilicon is doped, its resistance is still too high to be suitable for replacing the metal layer of MOS. Later, a solution was proposed, which is to add a layer of metal silicide on the surface of the polysilicon with a thickness equal to t...

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Problems solved by technology

However, the above method is not suitable for nickel

Because during the second tempering, NiSi will react into NiSi because the temperature is too high 2 , resulting in spikes and lateral dif

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