Manufacturing method for semiconductor chips

Abstract

By performing plasma etching on the second surface of a semiconductor wafer on the first surface of which an insulating film is placed in dividing regions and on the second surface of which a mask for defining the dividing regions are placed, the second surface being located opposite from the first surface, the insulating film is exposed from an etching bottom portion by removing portions that correspond to the dividing regions. Subsequently, by continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma, corner portions put in contact with the insulating film are removed. Subsequently, by removing the mask and thereafter performing plasma etching on the second surface, corner portions located on the second surface side are removed.

Description

technical field

[0001] The present invention relates to a semiconductor chip manufacturing method for forming semiconductor devices arranged in a plurality of device formation regions by dividing regions on a first surface of a semiconductor wafer and individually separating device formation regions of the semiconductor wafer along the divided regions The plurality of device formation regions are defined, thereby manufacturing a semiconductor chip including individualized semiconductor devices. Background technique

[0002] Generally, as a method of dividing a semiconductor chip into individual semiconductor chips by such a manufacturing method of a semiconductor chip, various methods have been known. For example, a method for dividing a semiconductor wafer by mechanically dicing the wafer by a rotating blade called a dicing blade.

[0003] However, in recent years, the wafers of the present invention have become thinner and thinner, and when a semiconductor wafer vulnerabl...

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