The invention discloses an
overlay mark
placement method, which comprises the following steps of: 1, determining a distribution structure of
crystal grains in an
exposure area; step 2, performing lattice division on each
crystal grain according to the distribution structure of the
crystal grains to obtain a lattice area of each crystal grain; and step 3, grouping the photomasks according to the process
layers. And 4, selecting a plurality of lattice point areas from the crystal grains of the
photomask corresponding to each group of process
layers as mark placement areas, and placing device area inner
overlay marks in the mark placement areas, wherein the arrangement and the number of the
overlay marks in the device area corresponding to the crystal grains meet the high-order compensation requirement of overlay errors. According to the method, the compensation value of the high-order correction overlay error of the device area can be accurately simulated and calculated, so that error compensation of the high-order compensation parameter of the overlay error in the
exposure area can be prevented, and the yield of products, especially large-size crystal grain products, is improved.