NOR flash memory and manufacture method thereof

Abstract

This invention relates to NOR type flash memory bank, it is made up by basement, control gate, doping area, separator layer, separator structure, floating gate, tunneling dielectric layer and intergate dielectric layer. The control gate is arrayed on the basement as first orientation; the doping area is arrayed on the basement as the second orientation. The separating layer is set between the control gate and the doping area, but the separating structure is set in the basement out of the doping area and the control gate. The floating gate is set between the basement among the separating layerand the control pole, the tunneling dielectric layer is set between basement and floating pole, intergate dielectric layer is set between control and floating poles.

Description

technical field [0001] The present invention relates to a flash memory body, and in particular to a NOR-type flash memory (NOR-type flash memory) and a manufacturing method thereof. Background technique [0002] Flash memory components have the advantages of being able to store, read, and erase data multiple times, and the stored data will not disappear after power failure, so it has become widely used in personal computers and electronic devices. A non-volatile memory element used. [0003] see figure 1 Shown is a top view of a known NOR flash memory body, and figure 2 yes figure 1 Sectional view of line II-II'. [0004] Please also see figure 1 and figure 2 As shown, there are diffusion regions 102 and isolation structures 104 arranged alternately in the y direction in the substrate 100 , and there are control gates 106 arranged at intervals in the x direction on the substrate 100 . The floating gate (not shown) and the tunneling dielectric layer (not shown) in th...

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Problems solved by technology

[0005] However, because the above-mentioned structure has a lot of contact windows, it is necessary to reserve a lot of contact window areas connected to the drain region when designing the array structure, resulting in that the area of ​​the NOR flash memory cannot be further reduced, and compared with the current miniaturization of semiconductors. contrary to the trend of development

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