Schottky barrier integrated circuit
A Schottky potential, integrated circuit technology, used in circuits, electrical components, transistors, etc.
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[0023]Generally, the present invention provides integrated circuits. The integrated circuit consists of at least one NMOS device or at least one PMOS device; wherein the at least one NMOS device or at least one PMOS device is a Schottky barrier MOS device with bulk charge transport. In one embodiment, the Schottky barrier BMOS and Schottky barrier PMOS devices each consist of a semiconductor substrate and a gate electrode on the semiconductor substrate. Source and drain electrodes on the semiconductor substrate define a channel region having a channel length and having mobile charge carriers, wherein at least one of the source and drain electrodes forms a Schottky connection with the substrate base or Schottky-like contacts.
[0024] As a unique advantage, the inventors have discovered that metal source and drain electrodes can greatly reduce parasitic series resistance (~10 Ω-μm) and contact resistance (less than 10 -8 Ω-cm 2 ). The built-in Schottky barrier at the Schott...
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