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Crucible for preparing crystal by high-temperature gas phase process and use method thereof

A high-temperature gas and crucible technology is applied in the field of crucibles for preparing crystals by a high-temperature gas-phase method, and can solve the problems of low heat transfer efficiency, low heat transfer efficiency, and difficulty in forming temperature gradients in the crucible.

Inactive Publication Date: 2006-12-13
SHENZHEN UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] The invention provides a crucible with a new shape and its corresponding use method, which solves the problems of low heat transfer efficiency of the crucible and difficult formation of an effective temperature gradient in crystal growth by high-temperature gas phase method
The invention effectively solves the problems of low heat transfer efficiency and difficulty in forming an effective temperature gradient in the process of preparing crystals by high temperature gas phase method

Method used

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  • Crucible for preparing crystal by high-temperature gas phase process and use method thereof
  • Crucible for preparing crystal by high-temperature gas phase process and use method thereof
  • Crucible for preparing crystal by high-temperature gas phase process and use method thereof

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Embodiment Construction

[0013] Crucible of the present invention such as figure 1 with figure 2 As shown, it is composed of a crucible body (1) and a crucible cover (2). The crucible cover is a disc or a disc with a boss shape that can be buckled downward. The crucible cover is directly pressed on the top of the crucible. The inside of the crucible body is a round The shape of the table, the top is large and the bottom is small, the wall of the crucible gradually becomes thicker from top to bottom, so that during the induction heating process of the crucible, the heat is less at the top and more at the bottom, resulting in a temperature field distribution in the crucible.

[0014] When the crucible of the present invention is used to prepare crystals by high-temperature gas-phase method, its use method is relatively unique. In the process of use, first put the material into the crucible, and burn the material into a frustum-shaped sintered block in the protective gas at a temperature slightly lower...

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Abstract

The invention relates to a method for preparing crystal crucible with high temperature gas method and its usage. In order to solve the lower gasifying rate caused by low heat transfer rate in preparing the crystal with high temperature gas method and the problem that in the crucible the effect temperature gradient is not easy to form, the invention makes the crucible have a big upper ID and a small lower ID and makes the materials closely contact with the crucible wall in heating process by special technique, which carries out the efficient conduction heating and improves the needed temperature gradient to prepare the crystal with larger size.

Description

technical field [0001] The invention relates to a crucible for preparing crystals by a high-temperature gas phase method and a method for using the crucible. Background technique [0002] At present, many important crystal materials of compound semiconductors need to be prepared by high-temperature gas-phase method. For example, silicon carbide crystals are heated by graphite crucibles to above 2000°C to sublimate them, and then condense into crystals at a lower temperature inside the crucible lid. It is prepared by the high-temperature physical gas phase method; the preparation of aluminum nitride crystals is generally to use a tungsten crucible to heat the aluminum nitride powder to above 1900 ° C to vaporize it, and then condense into crystals in the low temperature area between the upper part of the crucible and the crucible cover . The traditional shape of the crucible, that is, the straight crucible, has two big problems: 1. When heated to a certain temperature and ti...

Claims

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Application Information

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IPC IPC(8): C30B23/06F27B14/10
Inventor 武红磊郑瑞生鲁枫孙秀明
Owner SHENZHEN UNIV
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