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CMOS image sensor and manufacturing method thereof

An image sensor and insulating layer technology, applied in the field of image sensors, can solve the problems of reducing the threshold voltage of PMOS transistors, excessive fluctuation range of threshold voltage, and device reliability problems

Inactive Publication Date: 2006-12-20
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

More specifically, if the grid structure near the silicon surface is damaged by plasma, boron ions with high thermal diffusivity diffuse in the damaged junction and channel region during the subsequent thermal process, resulting in a decrease in Threshold voltage of PMOS transistor
Therefore, the fluctuation range of the threshold voltage becomes too large, which causes a problem of device reliability

Method used

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Embodiment Construction

[0050] Hereinafter, referring to FIGS. 4a to 4g, an embodiment of a method of manufacturing a CMOS image sensor according to the present invention will be explained in sequential order.

[0051] As shown in FIG. 4 a , a low-concentration P-type epitaxial layer 102 is formed on a high-concentration P++ type semiconductor substrate 101 using an epitaxial process. Here, the epitaxial layer 102 acts to form a deep and wide depletion region in the photodiode region. Therefore, the ability to collect photoelectrons of the low-voltage photodiode can be improved, and photosensitivity can also be improved.

[0052] Subsequently, after defining an active region and an isolation region on the semiconductor substrate 101, an isolation layer 103 is formed in the isolation region using an STI or LOCOS process.

[0053] Next, a gate insulating layer 104 and a conductive layer (for example, a heavily doped polysilicon layer) are deposited on the entire surface of the epitaxial layer 102 in s...

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Abstract

Disclosed are a CMOS image sensor and manufacturing method thereof. The method includes the steps of forming a lower insulating layer and an upper insulating layer on an entire surface of a semiconductor substrate in successive order, the substrate having an isolation layer defining an active region comprising a photodiode region and a transistor region, the transistor region having a gate thereon, the gate comprising a gate insulating layer and a gate electrode, and having insulating sidewalls on sides thereof; removing the upper and lower insulating layers from region(s) other than the photodiode region; forming a metal layer on the surface of the semiconductor substrate; and annealing the substrate to selectively form a salicide layer on a surface of the semiconductor substrate (other than the photodiode region).

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2005-0052377 filed on Jun. 17, 2005, the entirety of which is hereby incorporated by reference. technical field [0003] The present invention relates to an image sensor, and more particularly, to a complementary metal oxide semiconductor (CMOS) image sensor and a manufacturing method thereof. Background technique [0004] Conventionally, an image sensor, which is a kind of semiconductor device, converts an optical image into an electrical signal, and can generally be classified into a charge-coupled device (CCD) and a CMOS image sensor. [0005] The CCD includes: a plurality of photodiodes arranged in a matrix to convert optical signals into electrical signals; a plurality of vertical charge-coupled devices (VCCDs) formed between the photodiodes to transfer the generated charges in each photodiode; a plurality of horizontal charge-coupled devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/822H01L27/146
CPCH01L29/66659H01L27/14643H01L27/14689H01L27/14609H01L29/7835H01L27/146
Inventor 金唇翰
Owner DONGBU ELECTRONICS CO LTD