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Protecting thin semiconductor wafers during back-grinding in high-volume production

A semiconductor and wafer technology, applied in the field of processing thin semiconductor wafers, to achieve the effect of automatic technology

Inactive Publication Date: 2006-12-20
ADVANCED MATERIAL SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The present invention overcomes similar problems during processing and provides improved protection for thin wafers

Method used

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  • Protecting thin semiconductor wafers during back-grinding in high-volume production
  • Protecting thin semiconductor wafers during back-grinding in high-volume production
  • Protecting thin semiconductor wafers during back-grinding in high-volume production

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Embodiment Construction

[0017] figure 1 The perspective view of shows a protection disc 100 for protecting a semiconductor wafer during a process according to an embodiment of the present invention. in figure 1 In the described embodiment, the protective disc 100 includes an adhesive layer 130 bonded to the semiconductor wafer and a support layer 110 connected to the adhesive layer for supporting the semiconductor wafer during the process. That is, for example, the support layer 110 provides strength and hardness to the semiconductor wafer during the process. figure 1 The described embodiment represents one of the simplest embodiments of protecting the disc, involving only two layers: the adhesive layer 130 and the support layer 110. Other embodiments using any number of layers within the protective disc are also possible, which will be referred to later image 3 with Figure 4 For further discussion.

[0018] In one embodiment, reference here figure 1 The composition of the adhesive layer 130 inclu...

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Abstract

A protective disk for protecting a semiconductor wafer during processing includes an adhesive layer configured to adhere to the semiconductor wafer and a support layer coupled to the adhesive layer configured to provide strength and stiffness to the semiconductor wafer during processing. In one aspect of the invention, the protective disk is soluble in a mildly alkaline or mildly acidic solution. In another aspect, the adhesive layer comprises a high molecular weight polymer. In another aspect, the support layer comprises a polymer and a filler. The present invention may enable a robust, cost-effective, high-volume, automated process for thinning semiconductor wafers below 150 m, and for subsequent process steps of stress relief and transfer to a dicing frame for die singulation. Additionally, the invention enables use of existing toolsets and processes to produce thinner substrates than conventionally achievable.

Description

Technical field [0001] The present invention relates generally to processing semiconductor wafers, and more specifically, to processing thin semiconductor wafers. Background technique [0002] Generally, there are two main methods for back-grinding very thin semiconductor wafers. The first method involves laminating a relatively thin, flexible strip on the device side of the wafer before backgrinding. In some cases, a layer of photoresist is applied to the device side of the wafer before making the strips. The wafer is then ground, and the stress is relieved by chemical etching or chemical mechanical polishing. The strip is removed by a stripping process, and the photoresist (if any) is removed by immersion in a hot acid solution or solvent. The thinned wafer is then sent to a dicing frame (a sheet of adhesive held taught by a square, rigid frame) for single-die dicing (dicing) ). [0003] When the thickness of the final wafer is greater than or equal to 300 μm, the process of th...

Claims

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Application Information

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IPC IPC(8): H01L21/30H01L21/46B24B37/04H01LH01L21/304
CPCH01L21/304Y10T428/31598Y10T428/31504H01L21/78B24B37/34H01L21/6835H01L2221/68327H01L2221/6834H01L2221/68381H01L21/30H01L21/46
Inventor M·维斯尔曼K·佩特科弗R·梅特M·S·维斯尼斯基J·博伊德
Owner ADVANCED MATERIAL SCI
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