Semiconductor light-emitting device and method for manufacturing same

A technology for a light-emitting element and a manufacturing method, which can be applied to semiconductor devices, semiconductor lasers, electrical components, etc., can solve problems such as peeling and poor adhesion, and achieve the effects of suppressing invalid light emission and improving external quantum efficiency.
CN1894807AInactive Publication Date: 2007-01-10ROHM CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ROHM CO LTD
Publication Date
2007-01-10
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A semiconductor light-emitting device of the prsent invention forms a semiconductor multilayer portion(6) by stacking an n-type gallium nitride compound semiconductor layer(3) and a p-type gallium nitride compound semiconductor layer(5) so as to form a light-emitting portion, and a light-transmitting conductive layer(7) is formed on a surface of the semiconductor multilayer portion. A part of the light-transmitting conductive layer is removed, and an upper electrode(8) is so formed to be in contact with the exposed surface of the semiconductor multilayer portion and the light-transmitting conductive layer. By providing the surface of the semiconductor multilayer portion which is exposed through an opening(7a) of the light-transmitting conductive layer with a current blocking means(10), current is significantly prevented from flowing into a part under the upper electrode while securing good adhesion between the upper electrode and the surface of the semiconductor multilayer portion. Consequently, there can be obtained a semiconductor light-emitting device using a gallium nitride compound wherein the external quantum efficiency is improved by suppressing light emission under the upper electrode while enhancing adhesion between the upper electrode and the semiconductor layer.
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Description

technical field

[0001] The present invention relates to a semiconductor light-emitting element using a gallium nitride-based compound semiconductor. More specifically, it relates to forming an upper electrode with good adhesion on the surface of a semiconductor laminate made of a gallium nitride-based compound semiconductor that makes ohmic contact between the upper electrode made of metal and the surface of the semiconductor laminate difficult. At the same time, the current diffuses to the entire chip, and no current flows under the upper electrode where light cannot be taken out from the surface side, thereby preventing ineffective light emission. The semiconductor light emitting element and its manufacturing method. Background technique

[0002] Conventional semiconductor light-emitting elements using gallium nitride-based compound semiconductors, for example, are formed such as Figure 5 structure shown. That is to say, on the sapphire substrate 21, for example, sequent...

Claims

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