Magnetic memory device

Abstract

The invention provides a magnetic memory device capable of reading information at high speed. The device is equipped with a plurality of storage cells 1 arranged in two-dimensional array; a plurality of read bit lines 5 and a plurality of read word lines 6 for supplying read current Ib1, Ib2 for reading the information from first power supply (supply voltage Vcc) to each of the storage cells 1; a medium voltage generation circuit 25 of Y direction, connected to a part of the read bit line 5, for impressing the medium voltage Vry, lower than the supply voltage Vcc, to the read bit line 5; and a medium voltage generation circuit 35 of X direction, connected to the part of the read word line 6, for impressing the medium voltage Vrx, lower than supply voltage Vcc, to the read word line 6.

Description

technical field [0001] The present invention relates to a magnetic memory device capable of recording and reading information with a memory unit including a magnetoresistance effect display body. Background technique [0002] As such a magnetic memory device, there is known a magnetic memory device disclosed in Japanese Unexamined Patent Publication No. 2004-119638 already proposed by the applicant of the present application. The magnetic storage device is a magnetic random access memory (hereinafter also referred to as "MRAM: Magnetic Random Access Memory"), such as Figure 5 As shown, a plurality of memory cells 1 are respectively arranged in the word line direction (X direction) and a memory cell group 14 in the bit line direction (Y direction), and a plurality of read word lines 6 are arranged in the X direction, so that Two lines form a set of a plurality of read bit lines 5 arranged in the Y direction, forming a matrix as a whole. Each memory cell 1 is constituted by ...

AI Technical Summary

Problems solved by technology

Therefore, the time for the voltage of the read bit line 5 to rise from the application of the power supply voltage Vcc to the voltage (high level) at which the currents Ib1 and Ib2 necessary for information reading of the memory cell 1 can flow is lengthened. The problem is to lengthen the time to read information from memory cell 1

[0009] In particular, in order to increase the number of memory cells 1 connected to the read bit line 5 and the read word line 6 in order to increase the storage capacity, the increase in the size of the magnetic storage device cannot be tolerated, It is necessary to make each read bit line 5 and read word line 6 thinner, and make the arrangement between each read bit line 5, 5 and between each read word line 6, 6 closer, so each read bit line The resistance value and parasitic capacitance of line 5 and each read word line 6 increase

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