Magnetic memory device

Abstract

The invention provides a magnetic memory device capable of reading information at high speed. The device is equipped with a plurality of storage cells 1 arranged in two-dimensional array; a plurality of read bit lines 5 and a plurality of read word lines 6 for supplying read current Ib1, Ib2 for reading the information from first power supply (supply voltage Vcc) to each of the storage cells 1; a medium voltage generation circuit 25 of Y direction, connected to a part of the read bit line 5, for impressing the medium voltage Vry, lower than the supply voltage Vcc, to the read bit line 5; and a medium voltage generation circuit 35 of X direction, connected to the part of the read word line 6, for impressing the medium voltage Vrx, lower than supply voltage Vcc, to the read word line 6.

Description

technical field

[0001] The present invention relates to a magnetic memory device capable of recording and reading information with a memory unit including a magnetoresistance effect display body. Background technique

[0002] As such a magnetic memory device, there is known a magnetic memory device disclosed in Japanese Unexamined Patent Publication No. 2004-119638 already proposed by the applicant of the present application. The magnetic storage device is a magnetic random access memory (hereinafter also referred to as "MRAM: Magnetic Random Access Memory"), such as Figure 5 As shown, a plurality of memory cells 1 are respectively arranged in the word line direction (X direction) and a memory cell group 14 in the bit line direction (Y direction), and a plurality of read word lines 6 are arranged in the X direction, so that Two lines form a set of a plurality of read bit lines 5 arranged in the Y direction, forming a matrix as a whole. Each memory cell 1 is constituted by ...

Examples

Embodiment Construction

[0033] Hereinafter, the best mode of the magnetic memory device of the present invention will be described with reference to the drawings.

[0034] First, refer to figure 1 , 2 The configuration of the magnetic memory device M of the present invention will be described.

[0035] Such as figure 1 As shown, the magnetic storage device M includes an address buffer 11 , a data buffer 12 , a control logic unit 13 , a storage cell group 14 , a Y direction drive control circuit unit 21 , and an X direction drive control circuit unit 31 . In this case, the Y-direction drive control circuit unit 21 has a Y-direction address decoder circuit 22 , a readout circuit group 23 , a Y-direction current drive circuit group 24 , and a Y-direction intermediate voltage generation circuit 25 . On the other hand, the X-direction drive control circuit unit 31 has an X-direction address decoder circuit 32 , a constant current circuit group 33 , an X-direction current drive circuit group 34 , and ...

technical field

[0001] The present invention relates to a magnetic memory device capable of recording and reading information with a memory unit including a magnetoresistance effect display body. Background technique

[0002] As such a magnetic memory device, there is known a magnetic memory device disclosed in Japanese Unexamined Patent Publication No. 2004-119638 already proposed by the applicant of the present application. The magnetic storage device is a magnetic random access memory (hereinafter also referred to as "MRAM: Magnetic Random Access Memory"), such as Figure 5 As shown, a plurality of memory cells 1 are respectively arranged in the word line direction (X direction) and a memory cell group 14 in the bit line direction (Y direction), and a plurality of read word lines 6 are arranged in the X direction, so that Two lines form a set of a plurality of read bit lines 5 arranged in the Y direction, forming a matrix as a whole. Each memory cell 1 is constituted by ...

Examples

Embodiment Construction

[0033] Hereinafter, the best mode of the magnetic memory device of the present invention will be described with reference to the drawings.

[0034] First, refer to figure 1 , 2 The configuration of the magnetic memory device M of the present invention will be described.

[0035] Such as figure 1 As shown, the magnetic storage device M includes an address buffer 11 , a data buffer 12 , a control logic unit 13 , a storage cell group 14 , a Y direction drive control circuit unit 21 , and an X direction drive control circuit unit 31 . In this case, the Y-direction drive control circuit unit 21 has a Y-direction address decoder circuit 22 , a readout circuit group 23 , a Y-direction current drive circuit group 24 , and a Y-direction intermediate voltage generation circuit 25 . On the other hand, the X-direction drive control circuit unit 31 has an X-direction address decoder circuit 32 , a constant current circuit group 33 , an X-direction current drive circuit group 34 , and ...

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