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Moving phase grating mark and method for utilizing same in detecting image forming quality of photoetching machine

A technology of imaging quality and lithography machine, which is used in microlithography exposure equipment, photolithography process exposure devices, electrical components, etc. The problem is to overcome the incomplete detection, improve the detection accuracy of coma, and simplify the detection process.

Active Publication Date: 2007-03-14
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology

However, this technology cannot detect coma, and other methods need to be used to detect coma in the vertical axis imaging quality parameters, which makes the detection process of the vertical axis imaging quality parameters complicated
At the same time, due to the influence of coma aberration on the position offset of the alignment pattern, the measurement accuracy of XY-SETUP technology is affected by coma aberration

Method used

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  • Moving phase grating mark and method for utilizing same in detecting image forming quality of photoetching machine
  • Moving phase grating mark and method for utilizing same in detecting image forming quality of photoetching machine
  • Moving phase grating mark and method for utilizing same in detecting image forming quality of photoetching machine

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Embodiment Construction

[0016] Please refer to Fig. 1, the lithography machine system of the present invention comprises a light source 1, an illumination system 2, a mask 3, a mask table 4 carrying a mask 3, a projection objective lens 5, a substrate 6 coated with photoresist and a workpiece carrying a substrate 6 Taiwan 7. Wherein, phase-shifting grating marks 31 are formed on the mask 3 . The light source 1 is used to generate an exposure beam. The illumination system 2 adjusts the light intensity distribution of the light beam emitted by the light source 1 , and the projection objective lens 5 images the phase-shifting grating marks 31 on the mask 3 on the substrate 6 .

[0017] The deep ultraviolet laser emitted by the light source 1 is irradiated on the mask 3 after passing through the illumination system 2, and the phase-shifting grating mark 31 on the mask 3 is imaged on the substrate 6 coated with photoresist through the projection objective lens 5, and finally the substrate 6 is post-baked...

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Abstract

The provided shift phase grating mark included close line mark forms on mask of photo-etching machine and also includes small-width fine line mark. The corresponding detection method for image quality of photo-etching machine comprises: exposing the grating mark on the substrate, detecting the imaging position offset of grating mark exposed on mask; calculating the vertical imaging quality parameter. Compared with prior art, this invention simplifies detection process, and fit to take a complete parameter detection for vertical imaging quality.

Description

technical field [0001] The invention relates to the detection of imaging quality of a lithography machine, in particular to a method for detecting the imaging quality of a lithography machine by using a phase-shifting grating mark. Background technique [0002] Lithography machine is one of the key equipment in the process of integrated circuit manufacturing and production. The imaging quality of the lithography machine is a key factor to ensure the lithography performance of the lithography machine. The vertical axis imaging quality parameters of the lithography machine mainly include coma image plane, image plane translation, magnification change, image plane rotation, distortion, etc. With the continuous reduction of lithography feature size, the influence of the vertical axis imaging quality of lithography machine on lithography performance is becoming more and more prominent. The high-precision vertical axis imaging quality parameter detection technology of lithograph...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/027
Inventor 马明英王向朝王帆
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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