Method and system for operating physical gas-phase deposition

Abstract

This invention provides a kind of method that using the physics gas phase aggradation process semiconductor crystal round, including laying underlayment in the pedestal of the reaction room. The surface of the underlayment draws near the target material that in the reaction room. Target material includes the first face and second face which are set to the surface of the underlayment. The method includes operating the magnet component which is fixed around the revolution component, the revolution component is coupled with the reaction room and coupled with the driving motor and the driving motor is coupled to the drive. The magnet component is put in the place with destine dimension from the centre area of the revolution component. The method includes the magnet component which moves around the centre area by making use of the revolution component. The magnet component rotates with the speed v and affects the space covered in the second surface of the target. The method includes gaining information which relates to the magnet component, the electromagnetic field is relevant to the moving magnet component. The method includes handling information to ascertain if the electromagnetic field is in the preconcert parameter. It transmits the signal to drive to adjust magnet component speed and then to change the electromagnetic field.

Description

technical field [0001] The present invention relates generally to integrated circuits and integrated circuit processing methods for fabricating semiconductor devices. More specifically, the present invention provides a method and system for operating a physical vapor deposition process using active feedback control for fabricating semiconductor integrated circuit devices. It should be recognized, however, that the invention has broader applicability. For example, the invention can be applied to various other applications such as displays, MEMS. Background technique [0002] Over the past few decades, integrated circuits have grown from a handful of interconnected devices fabricated on a single silicon wafer to millions of devices. Current integrated circuits offer performance and complexity far beyond what was originally envisioned. In order to achieve progress in complexity and circuit density (i.e., the number of devices that can be packaged on a given chip area), the m...

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Problems solved by technology

As devices become smaller, sputtered films require higher uniformity, which is difficult to achieve with existing technologies

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