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Pixel sensor with raised silicon photodiode

A photodiode and pixel technology, applied in diodes, circuits, electrical components, etc., to enhance link performance and improve performance problems

Active Publication Date: 2010-12-22
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

N - layer is buried below the surface, so there are some difficulties in linking this region to the surface channel transmission gates located on the silicon surface

Method used

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  • Pixel sensor with raised silicon photodiode
  • Pixel sensor with raised silicon photodiode
  • Pixel sensor with raised silicon photodiode

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Embodiment Construction

[0031] In the following description, numerous specific details are provided in order to provide a thorough understanding of specific embodiments of the invention. One skilled in the art will recognize, however, that the invention can be practiced without one or more of these specific details, or that the invention can be practiced without other methods, elements, materials, or the like. In addition, well-known structures, materials, and operations are not shown or described in detail in order to clearly describe the various embodiments of the present invention.

[0032] In the description of the present invention, when referring to "an embodiment" or "a certain embodiment", it means that the specific features, structures or characteristics described in this embodiment are included in at least one embodiment of the present invention. Thus, appearances of "in an embodiment" or "in a certain embodiment" in various places in the specification do not necessarily refer to all belong...

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Abstract

A pinned photodiode that includes a raised silicon epitaxial layer that serves as a passivating layer. This allows the N-region to be near the surface of the silicon substrate, which enhances linkage to the transfer gate. The photodiode comprises an N-region formed within a P-type region of a semiconductor substrate having a top surface. An epitaxial silicon layer is formed on the top surface of said semiconductor substrate.

Description

technical field [0001] The present invention relates to image sensors, and more particularly, the present invention relates to an image sensor employing a pixel having a photodiode protruding above the plane of a semiconductor substrate. Background technique [0002] Image sensors have become ubiquitous, and they are widely used in digital cameras, cellular phones, security cameras, medical equipment, automobiles, and other applications. The technology of manufacturing image sensors, especially CMOS (Complementary Metal Oxide Semiconductor) image sensors continues to develop rapidly. For example, the requirements of high resolution and low power consumption promote the further miniaturization and integration of image sensors. [0003] Probably due to the extreme miniaturization and integration of image sensors, various problems have arisen with both CMOS and CCD image sensors. A serious problem is the appearance of potential barriers and / or well potential profiles at the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L27/146
CPCH01L27/14643H01L27/14603H01L27/14689H01L27/14609
Inventor 霍华德·E·罗德斯
Owner OMNIVISION TECH INC
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