79 results about "Silicon photodiode" patented technology

A system for automatic regulation of daylight admitted by a window in the presence of artificial illumination produced by a high-efficiency (e.g., fluorescent-type) electric lamp. A preferred embodiment, adaptive window covering system 10, consists of an illuminance sensor 11, a conventional control apparatus 12, and a conventional shading means 13. System 10 is used in conjunction with a conventional, high-efficiency, electric lamp 14 and a conventional window 18, in a room 19. Sensor 11 produces a signal dependent on power contained in a portion of the daylight spectrum, but substantially insensitive to power contained in the spectrum of artificial illumination produced by lamp 14. In a preferred embodiment, sensor 11 includes a silicon photodiode and optical low-pass filter to provide a spectral response which extends from approximately 800 to 1200 nanometers, which falls outside the spectrum produced by typical fluorescent lamps (e.g, 300 to 750 nanometers). Sensor 11 is oriented to sample the ambient illumination in room 19, which includes both daylight and artificial components. Control apparatus 12 produces an actuating signal dependent on the output of sensor 11. Shading means 13 varies the amount of daylight admitted by window 18 as a function of the actuating signal produced by control apparatus 12. Thus, system 10 varies the amount of daylight admitted by window 18 as a function of the power contained in a portion of the daylight spectrum, but independent of the power contained in the spectrum produced by lamp 14.

Enclosure door status may be detected. Light may be transmitted from a first component. The light may be received at a second component when a door is in a substantially closed position. The door may be mounted on a structure wherein an angle of incidence between the light transmitted from the first component and the second component increases proportionally to an angle of incidence between the door and the structure. The door may be determined to be in an open position when a light intensity received at the second component is less than a predetermined light intensity value that corresponds to a predetermined angle of incidence between the door and the structure. The first component may comprise a low divergence light emitting diode (LED) transmitter that may be configured to transmit light at a wavelength of approximately 950 nm. The second component may comprise a low profile silicon photodiode.

The invention belongs to the technical field of semiconductor integrated circuit manufacturing technology, and discloses an image sensor and a manufacturing method thereof. The image sensor comprises a semiconductor substrate, an interlayer dielectric layer, contact electrodes, a perovskite photoelectric film, a passivation layer and a three-primary-color filtering film. A photoelectric conversion unit is enabled to be separated from other functional units through introduction of the perovskite photoelectric film, and the two-dimensional planer structure of a conventional CMOS image sensor is optimized into a three-dimensional laminated structure. The image sensor based on the perovskite photoelectric film can have 100% of filling coefficient, and the chip size is greatly reduced. Besides, the technological requirement for extremely low noise of a silicon photodiode does not need to be considered in the manufacturing process of the chip so that the technological requirement can be reduced and cost can be substantially reduced.

The invention relates to a surface plasma resonance device for observing and detecting the biomolecular reaction in real time based on laser scanning confocal microscopic system. The device is configured in such a manner that a sample stage is provided with 3-dimensional manually-adjustable mechanism, a hemispherical prism as the surface plasma resonance core part is arranged on the sample stage, a constant-temperature flow through cell of which the pipe is connected with an injection pump is disposed under the hemispherical prism; the sample stage is placed on the position where the objective table of an inverted laser scanning confocal imaging microscope is arranged; an electrically-controlled angle adjusting device comprises a turntable platform controlled by a step motor and mechanical arms on the turntable platform; one mechanical arm is provided with a laser for generating surface plasma resonance, a beam-expanding mirror assembly, and a polarizer, which are arranged sequentially along the light path direction of the exit light, and the other mechanical arm is provided with a focusing lens and a silicon photodiode which are arranged sequentially along the light path direction of the reflected light; the silicon photodiode and a phase-locking amplifier are connected via data line, and the phase-locking amplifier is connected with a data acquisition and processing system which is connected with the controller of the injection pump.

The invention provides a device for high-flux monitoring of micro array biomolecular reaction through light reflex difference method, comprising an incident light path, a sample table, an emergent light path and a data acquisition and processing system, wherein, the incident light path comprises a laser, a polarizer, a photoelastic modulator, a phase shifter and a beam expander arranged between the phase shifter and the sample table; the emergent light path comprises a polarization analyzer and an electrooptical signal converter; the electrooptical signal converter comprises a silicon photodiode array, a pulse switching circuit, a first phase-locked amplifier and a second phase-locked amplifier; the output end of the silicon photodiode array is respectively in electric connection with the input ends of the pulse switching circuit, the first phase-locked amplifier and the second phase-locked amplifier. With a simple structure and easy operation, the device reduces the noise caused by moving a sample and greatly improves signal-noise ratio; meanwhile, the device can complete non-mark quick high-flux monitoring of the reactions of the array elements of a micro array at the same time, thereby greatly increasing monitoring efficiency.

The invention relates to a particulate matter concentration sensor based on true root-mean-square detection. The particulate matter concentration sensor comprises a voltage stabilizing power supply circuit, an air pump, a laser device, a detection casing, a silicon photodiode, a signal conversion and filtering circuit, and a true root-mean-square detection circuit. The air pump is used for sucking the particulate matters in air into the detection casing; the particulate matters sequentially pass through a narrow air path, and are irradiated by the laser to generate a pulse light signal; the pulse light signal is converted into a fluctuating current signal by the silicon photodiode; the current signal is converted into a voltage signal by the signal conversion circuit; the voltage signal is filtered into a voltage fluctuating signal with zero average value by a high-pass filter, and the voltage fluctuating signal is converted into direct current voltage by the true root-mean-square detection circuit, and is used as an output signal of the sensor; the higher the concentration of the particulate matters in the air is, the larger the light fluctuating is, and the larger the output signal is; the concentration of the particulate matters is detected by the principle. The particulate matter concentration sensor has the advantages that the structure is simple, the power consumption is lower, the property is reliable, the convenience in use is realized, the anti-interference capability is high, and the like.

The invention discloses a measuring apparatus for optical glass refractive index temperature parameters which includes an optical source and a Mach-Zehnder interferometer consists of four reflectors. The interferometer is provided with a glass stick with two parallel end surfaces. An optical axis of the glass stick is coincident with an optical axis of the interferometer and the two ends of the interferometer are respectively provided with a first pinhole diaphragm and a second pinhole diaphragm. A silicon photodiode used for measuring the changes of interference fringes formed at the end surfaces of the glass stick is arranged near the first pinhole diaphragm and a silicon photoelectric generator used for measuring the changes of the Mach-Zehnder interference fringes is arranged near the second pinhole diaphragm. The invention is characterized in that the glass stick is provided with a heating furnace and has the advantages of giving a heating furnace structure which realizes an axial symmetry temperature field and proposing a detail measuring method; the refractive index temperature coefficients and the heat expansion coefficients of a certain temperature range during one measurement can be simultaneously obtained according to the measuring method and the micro-expansion coefficients (10<-7> DEG C<-1> ) of low expansion glasses can also be measured.

A photodiode includes SOI substrate and a plurality of interdigitated electrodes comprising of different doped regions. A silicon device region is defined in the SOI substrate having a thickness between 0.5 and 5 microns.

An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

A monolithically integrated CMOS image sensor with double focal micro-lens array comprises a standard CMOS logic circuit integrating a photodiode of silicon pin, a micro-lens array integrated on an optical absorption surface corresponding to an active region of the CMOS circuit, a silicon nitride layer covering the micro-lens array, a color filter arranged on the silicon nitride layer. The invention is characterized in that the micro-lens array, which is a double focal micro-lens array, is monolithically integrated with the CMOS circuit, and with a 1.44-2.0 refractive index, the micro-lens array is applied on a good optical focusing double focal micro-lens array to improve light collection efficiency and quantum efficiency.

A silicon photo-detection module is disclosed, in which a silicon photodiode detection unit and a parasitical vertical bipolar junction transistor amplification unit can be simultaneously formed by a CMOS process. The silicon photo-detection module has a silicon substrate, a silicon photodiode detection unit comprising a positive portion and a negative portion, and a parasitical vertical bipolar junction transistor amplification unit comprising a collector, a base, and an emitter. The silicon photodiode detection unit and the parasitical vertical bipolar junction transistor amplification unit are formed on the silicon substrate by a CMOS process. Besides, the positive and negative portions of the silicon photodiode detection unit are electrically connected respectively with the base and the collector of the parasitical vertical bipolar junction transistor amplification unit.

The invention discloses a miniature ultraviolet-visible/infrared nondestructive test spectrometer. The nondestructive test spectrometer comprises a light source, a photoelectric sensor, a circuit system, a housing and a power source. The light source comprises a base pin, a base, an aluminum substrate, a minisize single-chip microcomputer circuit, a LED array, an optical conductor and a light guide cylinder; the photoelectric sensor is an ultraviolet/infrared silicon photodiode; the circuit system comprises a single-chip microcomputer control circuit, a power amplifier circuit, a signal amplification and filter circuit, and a data transmission circuit; the housing is the cylinder with a light source slot, a power source socket, a communication socket, and a separating layer; and the power source is the DC source. The miniature ultraviolet-visible/infrared nondestructive test spectrometer can be used for determining the ultraviolet-visible/infrared transmission reflection absorption spectrum of one or more specific target substances, and has the advantages of small whole machine volume, light weight, and low cost, is suitable for on-site detection and is convenient for popularization, spectrum resolution is ideal, and the anti-interference performance and the stability of the system are good.

The invention discloses a multi-spectral measurement type light resource monitoring method and system. The multi-spectral measurement type light resource monitoring method comprises implementing the measurement of the irradiance of the solar radiation in the multi-spectral range through a plurality of channels and combining an indium, gallium and arsenic pin photoelectric detector of a broadband and a light filter with a silicon photodiode detector to implement the multi-spectral light resource monitoring based on measurement data of the irradiance of the solar radiation in the multi-spectral range. According to the multi-spectral measurement type light resource monitoring method and system, the defects that the equipment types are less, the applicable range is small, the measurement accuracy is low, and the like in the prior art can be overcome so as to implement the more equipment types, large applicable range and high measurement accuracy.

The invention discloses a turbidity measuring circuit which comprises a central processor; the central processor is electrically connected to a constant current control module; the constant current control module is electrically connected to a white LED lamp; the white LED lamp acts on a signal receiving module through an optical structure; the signal receiving module is coupled to a current/voltage conversion module; a signal converted by the current/voltage conversion module passes through a signal amplification module and then is delivered to the central processor. The turbidity measuring circuit adopts the white LED lamp as a light source and a first-level silicon photodiode as a signal receiving unit, the white LED lamp is controlled to generate stable brightness through the constant current control module, a differential amplifying circuit is adopted after the signal is received, and interference is suppressed; a circuit land is used as a reference for AD sampling, PGA inside an AD chip is used for controlling gain to achieve high resolution ratio and stable effect, and influence of zero drift and unstable measurement under low turbidity is effectively inhibited.

The invention discloses a miniature nuclear radiation dose measuring device, comprising a detector and a mobile terminal, wherein the detector comprises a photoelectric conversion sensor, a pre-smallsignal amplifier and a signal reshaper, the photoelectric conversion sensor, the pre-small signal amplifier and the signal reshaper are connected in sequence, the mobile terminal is connected to the detector to detect radiation signals of gamma rays and X rays, a pulse counter is arranged in an inner cavity of the mobile terminal, and an output signal of the detector passes through the pre-small signal amplifier and the signal reshaper in sequence to be connected with the pulse counter. The miniature nuclear radiation dose measuring device disclosed by the invention is novel in design and simple in operation, can detect the radiation signals in a place where radiation is possible, so as to reduce unnecessary injury caused by the entry of people in the radiation place, and a PIN type silicon photodiode has the advantages of high response, interference resistance, small volume, high sensitivity, no supply of bias high voltage and the like compared with the conventional radiation detector.

The invention relates to the field of optical measurement, a device for estimating the absolute light responsivity of a photomultiplier tube under low light intensity conditions, mainly comprising a laser, an attenuator I, a dark box, a beam splitter I, an attenuator II, a plane mirror I, a shutter I, Shutter II, plane mirror II, beam splitter II, cassette, silicon photodiode, photomultiplier tube to be tested, said beam splitter I, attenuator II, plane mirror I, shutter I, shutter II, plane mirror II, beam splitter II , cassette, silicon photodiode, and photomultiplier tube to be measured are all located in the dark box, and the silicon photodiode and photomultiplier tube to be measured are located in the cassette, composed of laser, attenuator I, beam splitter I, shutter I, plane mirror II, Beam splitter II and silicon photodiode form optical path I, which consists of laser, attenuator I, beam splitter I, attenuator II, plane mirror I, shutter II, beam splitter II, and silicon photodiode. I. The attenuator II has a certain angle with the optical axis of the measurement system.

The invention discloses a multiple fluorescence detection light path applied to a real-time fluorescence PCR instrument. The multiple fluorescence detection light path comprises: an emergent light path of a white light LED light source, wherein a diaphragm, a collimating lens and a short-pass optical filter are arranged on the emergent light path of the white light LED light source; and a transmission light path of the short-pass optical filter, wherein a first long-pass dichroic mirror is arranged on the transmission light path of the short-pass optical filter, a second long-pass two-phase color mirror is arranged on a reflection light path of the first long-pass dichroic mirror, a first receiving collimating lens, a first narrowband optical filter and a first silicon photodiode are arranged on the rear side of the light guide plate, a third long-pass two-phase color mirror is arranged on a reflection light path of the second long-pass two-phase color mirror, the transmission light path is provided with a first objective lens, a second receiving collimating lens, a second narrow-band optical filter and a second silicon photodiode are arranged on the rear side of the second substrate; a fourth long-pass two-phase color mirror is arranged on a reflection light path of the third long-pass two-phase color mirror; a second objective lens is arranged on the transmission light path,a third receiving collimating lens, a third narrow-band filter and a third silicon photodiode are arranged on the rear side, a fourth long-pass dichroic mirror reflection light path is provided with afourth objective lens, a third objective lens is arranged on the transmission light path, a fourth reflection light path is provided with a fourth objective lens, and a fourth receiving collimating lens, a fourth narrow-band filter and a fourth silicon photodiode are arranged on the rear side.

The invention relates to an automatic type detonation-hindered flame arrester, which belongs to the technical field of chemical engineering machinery. The automatic type detonation-hindered flame arrester is characterized in that: the flame arrester comprises a sensitization element, a control circuit, an actuating mechanism, a sliding flame retardant core mechanism, a power mechanism and a resetting mechanism, wherein the sensitization element consists of optical fibers, a metal pad and upper part and lower part sealing gaskets; an electric control mould box of the control circuit contains asilicon photodiode, a single-chip microcomputer, and a signal transmitter which is used when the resetting mechanism is manual; the single-chip microcomputer detects, receives and times electric signals from the silicon photodiode and the signal transmitter and controls the starting of external and internal electric control sticking points; the actuating mechanism is the internal and external electric control sticking points; the sliding flame retardant core mechanism consists of a flame retardant core and a flame arrestor casing; the power mechanism is a bursting power source such as a big spring; and the resetting mechanism comprises a metal chain, a fixed rotating shaft, a mobile rotating shaft and a power source. The automatic type denotation-hindered flame arrester has the advantagesthat: the flame arrester cannot only extinguish flame to realize the aim of flame retardation if the flame exists, but also have nearly zero resistance to gas if no flame exists.

The invention discloses a perylene-3,4,9,10-tetracarboxylic acid dianhydride organic layer optoelectronic coupler, comprising a light emitter and a light receiver which are assembled inside one sealing metal housing; the light emitter is a GaAs infrared light emission diode chip, and the light receiver is a perylene-3,4,9,10-tetracarboxylic acid dianhydride optoelectronic detector electrode chip. The perylene-3,4,9,10-tetracarboxylic acid dianhydride optoelectronic detector electrode chip comprises a gold electrode layer, a P-Si substrate layer, a perylene-3,4,9,10-tetracarboxylic acid dianhydride single crystal film and a ITO film which are successively stacked; a nickel film layer is arranged on the surface of the ITO film layer, and an aluminum film layer is positioned on the surface of the nickel film; the nickel film and the aluminum film constitute a chip electrode which has a diameter of 50Mum; and the perylene-3,4,9,10-tetracarboxylic acid dianhydride organic optoelectronic detector chip is used as the light receiver and the GaAs infrared light emission diode is used as a light emitter. The perylene-3,4,9,10-tetracarboxylic acid dianhydride organic layer optoelectronic coupler is small in volume, good in performance, and wide in frequency band responding, the photoelectric conversion efficiency is over 98 %, which is improved by 20 % comparing with the photoelectric conversion quantum efficiency synthesizer of the optical coupler combined by the silicon photodiode and the silicon phototriode, and the production cost is 50% of the monocrystalline silicon member.

A multilayer polarization sensor (MPS) for measuring the polarization of radiation in the x-ray and extreme UV wavelength regions. The MPS includes a silicon photodiode with a multilayer (e.g. 50 bilayers) interference coating. The interference coating selectively transmits the orthogonal (p) polarization component in the desired wavelength to generate a current. The (s) polarization component is transmitted through a second interference coating to generate another current. The ratio of the difference between the currents to sum of the currents is the measure of polarization of the incident radiation. Radiation outside the desired wavelength can be dispersed out of the incident beam by a transmission or reflection grating.

The invention discloses a pre-amplifier for a weak optical signal of a magnetic field inertial measuring device. The pre-amplifier comprises two silicon photodiodes, an automatic depolarization amplifying module for one route of differential signals and two single-channel monitoring modules for two routes of optoelectronic signals, wherein current output ends of the two silicon photodiodes are reversely connected in parallel so as to supply the differential signals, and signals of the other two current output ends are respectively taken as input signals monitored by a single end; the automaticdepolarization amplifying module comprises a transimpedance amplifying circuit and a direct current proportion-integral feedback loop and is used for realizing a low-noise amplifying function in alternating components of a light current; and the two single-channel monitoring modules are respectively used for monitoring original light intensity information of the two silicon photodiodes in real time. According to the pre-amplifier, an automatic depolarization low-noise amplifying function and a real-time monitoring function of two routes of original signals are realized in a frequency responserange of 10k-100k by virtue of the two silicon photodiodes.