25 results about "Silicon photodiode" patented technology

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

The utility model relates to the technical field of optical modules, and particularly discloses a four-channel germanium-silicon photodiode receiving array chip which comprises an optical input port I1 and a photodiode PD1, the optical input port I1 is connected with an optical receiving end of the photodiode PD1, and an electric output end of the photodiode PD1 is connected with a PD1 + end and a PD1-end arranged on the chip. The objective of the utility model is to solve the problems of high cost, low production efficiency and low yield of a 400G DR4 optical module using four separated photodiodes in the prior art.

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

An imaging device includes a stack formed by a first silicon photodiode and a second photodiode based on quantum dots. The first silicon photodiode is arranged between a side of the stack configured to receive incident light and the second photodiode. The incident light includes infrared wavelengths and visible wavelengths. A filter positioned between the first silicon photodiode and the second photodiode reflects visible wavelengths back to the first silicon photodiode and passes infrared wavelengths through to the second photodiode.

The invention relates to a silicon photodiode wide-spectrum strong light damage real-time detection device, and belongs to the field of optical detector performance detection. The device comprises a wide-spectrum strong light measurement performance detection part and a wide-spectrum strong light tolerance performance detection part, the wide-spectrum strong light measurement performance detection part is mainly used for real-time detection of the wide-spectrum strong light measurement performance of the silicon photodiode, and the wide-spectrum strong light tolerance performance detection part is mainly used for real-time detection of the wide-spectrum strong light tolerance performance of the silicon photodiode. The two parts take respective detected silicon photodiodes as wide-spectrum strong light detectors, and acquire real-time output current of the respective detected silicon photodiodes through respective operational amplifiers, shunt resistors, anti-phase input end resistors and bridging resistors; and thus, the real-time wide-spectrum strong light measurement performance and the wide-spectrum strong light tolerance performance of the silicon photodiode can be obtained. The device has the characteristics of high timeliness for detecting the limit performance of the silicon photodiode, simplicity, intuition, convenience in use and high reliability.

Scalable in-sensor visual processing arrays of dual-gate amorphous-silicon photodiodes, which are used for multiplexed event sensing at sub-ms precision and edge detection of multiple objects, respectively. Both arrays are built in ca. 200-μm pitches and consume zero static power via their bias conditions; their analog output directly captures the amplitude of event-driven light changes and light intensities on the object edges without complex digitization circuits. Capable of processing both temporal and spatial visual information, these arrays emulate the signaling pathways in the human retina, suggesting a path towards large-scale analog in-sensor visual processing systems.

The photovoltaic auxiliary staged bootstrap DC-DC boost conversion circuit comprises a DC power supply circuit, a self-excited blocking oscillation circuit, a photovoltaic biasing circuit, a full-wave rectification circuit, a voltage monitoring circuit, an energy storage capacitor Cr and a load RL. According to the circuit, an NJFET-NMOS staged migration bootstrap starting mechanism is adopted, initial positive feedback is established under extremely low voltage through a depletion type NJFET, and when grid voltage reaches an NMOS threshold value, a main switch process is taken over by an NMOS, so that on resistance is reduced, and energy injection is accelerated. Meanwhile, direct current bias is provided for the grid electrode through a silicon photodiode bias circuit structure, and conduction of the NMOS is accelerated; smooth transition from an under-voltage region to a steady-state region is realized by combining voltage real-time monitoring and a self-adaptive conduction path. The problem that rapid self-driven starting and steady-state energy output of an ultra-low-voltage self-powered system are difficult is solved.

The invention discloses a high-sensitivity Raman detection method and device based on an MOEMS scanning grating, and belongs to the technical field of optical detection.The high-sensitivity Raman detection device based on the MOEMS scanning grating comprises a continuous laser light source used for emitting continuous laser; the light chopper is used for carrying out pulse modulation on the continuous laser and enabling the modulated pulse laser beam to enter the beam splitter or the silicon photodiode; the spectrograph is used for splitting the pulse Raman scattering light signal to obtain a measured signal and inputting the measured signal to the lock-in amplifier, and the spectrograph comprises an MOEMS scanning grating structure; continuous laser is modulated through the double-circle photochopper, two reference signals with the 90-degree phase difference are obtained through the physical structure of the photochopper, vector operation is carried out by adopting the MOEMS scanning grating light splitting technology in combination with the double-path phase-locked amplification technology, and the amplitude of the pulse Raman scattering light signal is obtained through the phase-locked amplification technology. And the real signal amplitude is extracted, and the influence of phase drift is eliminated.

A novel, modified MEMS accelerometer with additional ability to measure optical radiation due to integration of silicon photodiode in the silicon cap. The silicon cap is used to protect the MEMS based accelerometer from the environment. The function of the cap is enhanced to include optical measurement. The entire sensor element including accelerometer and photodiode (XL+PD) occupies no more space than the XL alone.

This invention discloses a portable high-flux-rate synchrotron radiation X-ray air kerma measurement device. This invention relates to the field of X-ray air kerma measurement technology, and proposes the following solution: It includes a silicon photodiode, a front shielding plate, a middle frame, and a rear shielding plate. A detector window is provided at the center of the front shielding plate, and a beryllium plate is mounted on the back of the detector window. The silicon photodiode is fixedly mounted on a base, which is also fixedly mounted on the front shielding plate. Mounting holes are provided on the rear shielding plate. This invention, by being installed within the front, middle, and rear shielding plates, possesses the characteristics of miniaturization and portability, making it suitable for small laboratories and portable use. Unlike free air ionization chambers, silicon photodiodes have high quantum efficiency, low dark current, strong radiation resistance, insensitivity to external magnetic fields, and do not require external bias voltage for measurement. Furthermore, their small size makes them easy to move.

The application discloses a high-sensitivity Raman detection method and device based on a MOEMS scanning grating, and belongs to the technical field of optical detection, and the technical solution points of the application are as follows: a continuous laser light source is used for emitting continuous laser light; a light chopper is used for pulse-modulating the continuous laser light, and the pulse-modulated laser beam is incident to a light splitting sheet or a silicon photodiode; a spectrometer is used for splitting the pulse Raman scattering light signal, obtaining a measured signal, and inputting the measured signal into a phase-locked amplifier, and the spectrometer comprises a MOEMS scanning grating structure; and the phase-locked amplifier is used for obtaining the amplitude of the pulse Raman scattering light signal according to the measured signal, wherein the application modulates the continuous laser light through a double-ring light chopper, two reference signals with a 90-degree phase difference are obtained by using the physical structure of the light chopper, the MOEMS scanning grating splitting technology is adopted, the vector operation is combined with the double-path phase-locked amplification technology, the real signal amplitude is extracted, and the influence of phase drift is eliminated.

The utility model discloses a scintillator afterglow testing device which comprises an operation all-in-one machine, an X-ray source and a shielding box, a movable base with universal wheels is arranged at the bottom of the shielding box, an operation platform with a keyboard and a mouse is arranged on the upper side of the front face of the shielding box, the operation all-in-one machine is fixed on the shielding box through a mounting frame, the X-ray source is located in the shielding box, and the X-ray source is located in the shielding box. A test platform fixing plate is arranged in the shielding box, a scintillator placing plate is arranged on the test platform fixing plate, a silicon photodiode and a scintillator for testing are arranged on the scintillator placing plate, the scintillator is located above the silicon photodiode, and a movable guide rail is arranged in the shielding box. The production cycle of products and the production cost of manufacturers are reduced; and the safety is better.

The invention relates to the technical field of bridge quality monitoring, in particular to a bridge concrete quality monitoring method and system based on edge detection, and the method comprises the steps: S1, image collection and dynamic standardization; s2, concrete surface pretreatment; s3, concrete crack edge detection; s4, quantifying the geometrical characteristics of the crack; and S5, performing quality grading and disposal. According to the scheme, the unmanned aerial vehicle carries a multispectral camera to realize automatic acquisition of bridge concrete surface images, flies in a grid path, and is matched with a silicon photodiode sensor to obtain environmental illumination in real time, illumination correction is performed on the images through a dynamic compensation coefficient, and overexposure / underexposure influences are eliminated. In the preprocessing stage, median filtering and a CLAHE algorithm are adopted, and noise interference is reduced while edge features are effectively reserved. Compared with traditional manual inspection or fixed camera shooting, the process has the advantages that data acquisition uniformity and image quality are greatly improved, and subjective errors of manual operation are avoided.

The invention relates to an alkali metal iodide-based luminescent material for radiation detection and a preparation method thereof, the alkali metal iodide-based luminescent material comprises Cu < + > doped alkali metal iodide, and the Cu < + > doped alkali metal iodide comprises NaI: Cu. Cu < + > is selected as a luminescent center material to be doped in the alkali metal iodide crystal, an isolated energy band state can be introduced into an energy band structure of the alkali metal iodide crystal, a band gap structure of the alkali metal iodide crystal is regulated and controlled, exciton localization is remarkably enhanced, and strong-broadband flickering luminescence is obtained when high-energy ray excitation is carried out; the emission wavelength is matched with the sensitive wavelength of the silicon photodiode, efficient radiation detection can be achieved after the two are coupled, doping of traditional high-cost rare earth elements and high-toxicity T1 elements is replaced, the risk of heavy metal to the environment and the health of a user is effectively avoided, and the cost of the material is greatly reduced.

The present disclosure provides a structure of an ultraviolet light sensing-enhanced photodiode. The main structure of the photodiode includes a silicon photodiode and an infrared conversion layer formed on a surface that receives an ultraviolet light of the of the silicon photodiode. When the ultraviolet light irradiates on the ultraviolet light sensing-enhanced photodiode through the infrared conversion layer, the infrared conversion layer converts the ultraviolet light into an infrared light. The first portion of the infrared light is propagated to the silicon photodiode and then converted to a photoelectric current. The second portion of the infrared light is absorbed by the infrared conversion layer. An infrared reflection layer is also provided for reflecting the third portion of the infrared light that is originally escaped from the infrared reflection layer, and the third portion of the infrared light can be reflected into the silicon photodiode.

The invention discloses a full-spectrum wave band light intensity detectable system based on an FPGA (Field Programmable Gate Array), and relates to a photodiode which responds to light in a certain wave band of a full spectrum, for example, the spectral response range of a silicon photodiode FDS100 is 350-1100 nm, and the spectral response range of a germanium photodiode FDG03 is 800-1800 nm. According to the light intensity detection system provided by the invention, photovoltages are sequentially input into the single-end-to-double-end circuit, the step-down circuit, the amplification circuit, the step-down circuit and the analog-to-digital conversion circuit by utilizing the characteristic that photovoltages are different due to different wavelengths and light intensities of a photodiode, and are finally input into the FPGA, so that the photovoltages generated by incident light with known wavelengths and unknown light intensities are obtained; the incident light intensity of the photodiode under the known wavelength is obtained through the linear relation between the photovoltage and the incident light intensity of the photodiode under the known wavelength. The light intensity detection system provided by the invention has the advantages of being convenient to verify, simple in used material and stable in system, the light voltages of different diodes under the same wavelength and the same light intensity are different, and the light intensity of the incident light can be obtained only by obtaining the linear relation between the light voltages and the incident light intensity under the wavelength, so that the method has universality. The light intensity detection system provided by the invention can be used for a full wavelength range or a wavelength range of a full spectrum band.

The utility model relates to the technical field of optical disc cleaning and detection, in particular to a cleanliness detection device for glass discs, which comprises a detection platform, a placing disc arranged above the detection platform, a disc arranging column fixed at the center of the placing disc upwards, glass discs to be detected arranged above the placing disc in a mutually stacked manner, and a detection device for detecting the cleanliness of the glass discs, a detection gripper mechanism mounted above the detection platform is arranged on one side of the placement disc, the detection gripper mechanism comprises a first glass disc supporting block, a second glass disc supporting block and an electric clamping jaw, and clamping grooves are formed in the outer side surfaces of the first glass disc supporting block and the second glass disc supporting block; one end of the first glass plate supporting block and one end of the second glass plate supporting block are installed at the driving end of the electric clamping jaw, a detection base installed at the upper end of the detection platform is arranged on one side of the detection gripper mechanism, a detection base block is fixedly arranged at the upper end of the detection base, and a detection groove is formed in the detection base block. A light source generator and a silicon photodiode sensor which are oppositely arranged are arranged at the two ends of the detection groove.

The invention provides a portable optical power meter for an optical cage system, and relates to the technical field of optical measurement and photoelectric detection equipment. The optical power meter is specifically composed of a cage type optical power meter probe module and a single-chip microcomputer control display module. The single-chip microcomputer control display module comprises a control key, a development board and a liquid crystal display screen. The device adopts a circular structure matched with the distance between guide rods of a cage-type system, so that the photoelectric detection unit can be directly mounted in the center of a cage-type light path, and coaxial incidence and in-situ measurement of light beams are realized. A silicon PIN photodiode, an RC low-pass filter and four independent-range resistors are arranged in a probe module of the cage type optical power meter, and the different independent-range resistors are communicated through jumper caps to achieve wide dynamic measurement. The control key is used for completing dark current zero clearing, mode selection and parameter setting; the development board carries out sampling and conversion on the photoelectric conversion voltage and communicates with the liquid crystal display screen, so that real-time display of measurement data and a working state is realized.

The utility model relates to an ultraviolet light detection device which is characterized in that an ultraviolet light source emitting end is arranged at a light inlet end of an assembly bracket, a cuvette lower cover plate and a cuvette upper cover plate are arranged in the assembly bracket, a space is formed by the cuvette lower cover plate and the cuvette upper cover plate, and a dimmer fixing component and a cuvette sample pool are inserted into the space; the light emitting end of the assembly support is provided with a multiband optical filter switcher and a switcher pressing plate, the outer side of the switcher pressing plate is provided with a silicon photocell detection end, the silicon photocell detection end is in signal connection with an electric signal data acquisition device, and the ultraviolet light source transmitting end can transmit parallel ultraviolet light with three different wavelengths. Ultraviolet light sequentially passes through the dimmer fixing assembly, the cuvette sample pool and the multiband optical filter switcher and finally enters the silicon photocell detection end, and a sample concentration value reflected by the intensity of an optical signal is converted into an electric signal and is transmitted to the electric signal data acquisition device. According to the utility model, short-distance parallel light is adopted, the whole optical path range is small, and the working efficiency is high.

The invention relates to an electronic device. An imaging device includes a stack formed of a first silicon photodiode and a second photodiode based on quantum dots. The first silicon photodiode is arranged between a side of the stack configured to receive incident light and the second photodiode. The incident light includes an infrared wavelength and a visible wavelength. A filter positioned between the first silicon photodiode and the second photodiode reflects the visible wavelength back to the first silicon photodiode and passes the infrared wavelength to the second photodiode.

Electronic device comprising a quantum dot photodiode. This description relates to a device comprising a stack consisting of at least: - a first silicon photodiode (312); and - a second quantum dot photodiode (316); the first photodiode being arranged between one side of the stack configured to receive incident light and the second photodiode (316). Figure for the abstract: Fig. 2

The invention relates to a sensitivity calibration system and method for an X-ray scintillation detection system, belongs to the technical field of calibration of X-ray radiation power diagnostic equipment, and solves the technical problem that the sensitivity calibration of the X-ray scintillation detection system is inaccurate. The absolute sensitivity calibration system comprises a standard silicon photodiode and a second small galvanometer. The relative sensitivity calibration system comprises a visible light source system and a darkroom. The sensitivity calibration method comprises the following steps: measuring absolute sensitivity curves of the high-sensitivity scintillation detection unit corresponding to different X-ray irradiation energy E, and calculating the absolute sensitivity of the high-sensitivity scintillation detection unit; and calibrating the relative sensitivity of the scintillation detection system under the irradiation condition of the visible light source system. The method is used for calibrating the sensitivity of the X-ray scintillation detection system.

The utility model provides an optical fiber liquid fluorescence concentration measuring device. The optical fiber liquid fluorescence concentration measuring device comprises a cassette, an amplifying circuit, a pull-out switch, an exciting light path, a clustered optical fiber probe, a collecting light path and a cuvette, the excitation light path comprises a semiconductor laser, a narrow-band filter and an excitation optical fiber, and the collection light path comprises a collection optical fiber, a lens support group, two lenses, a dichroscope, a light trap and a silicon photodiode. According to the utility model, the forked optical fiber structure is adopted to form a non-confocal optical path structure, and the photomultiplier replaces a charge-coupled device to serve as a detector, so that compared with the prior art, various inconveniences brought by a large-scale optical instrument in the use process are avoided. In the device provided by the utility model, the optical fiber with the forked structure is adopted, and the excitation end and the collection end are separated, so that the problem of steric hindrance is solved, and the influence of excitation light on collected signals is reduced. The device is small in size, easy to move, low in cost and more suitable for actual use.

The utility model relates to the technical field of optical modules, and discloses an integrated 2 * 4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which is characterized in that an optical input port I1 is connected with an optical input end of a first wavelength division multiplexer, a first optical output end of the first wavelength division multiplexer is connected with an optical receiving end of a photodiode PD1, and a second optical output end of the photodiode PD2 is connected with an optical receiving end of a second wavelength division multiplexer; a second light output end of the first wavelength division multiplexer is connected with a light receiving end of the photodiode PD2, a third light output end of the first wavelength division multiplexer is connected with a light receiving end of the photodiode PD3, and a fourth light output end of the first wavelength division multiplexer is connected with a light receiving end of the photodiode PD4; the optical input port I2 is connected with the optical input end of the second wavelength division multiplexer, the first optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD5, and the second optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD6. And a third light output end of the second wavelength division multiplexer is connected with a light receiving end of the photodiode PD7.