49 results about "Silicon photodiode" patented technology

The invention relates to the technical field of integrated circuit board manufacturing and packaging, and discloses an integrated circuit board manufacturing and packaging method and system based on laser measurement, and the method comprises the steps: sensing arrangement: employing a focusing lens to focus a laser beam to the surface of a substrate, arranging a reflector and a spectroscope to guide the laser beam to the surface of the substrate, meanwhile, a sensor is arranged in the packaging equipment for monitoring; signal conversion: receiving a reflected light signal by adopting a silicon photodiode, and converting the reflected light signal into an electric signal; data acquisition: acquiring electric signal data, environment data and substrate information data; data calculation: calculating a warping prediction index and an offset prediction index; data evaluation: evaluating the packaging effect index; and comprehensive judgment: according to the packaging result index, judging whether automatic adjustment and compensation need to be carried out, and under the condition that automatic adjustment and compensation need to be carried out, calculating a compensation coefficient to carry out automatic compensation, so that active suppression of the substrate warping offset defect and intelligent improvement of the process efficiency are realized.

The invention belongs to the technical field of catalytic chemistry, and particularly relates to a method for enhancing photoelectric composite catalytic reaction efficiency through self-adaptive multi-field coupling. Specifically, firstly, a closed columnar reactor composed of an LED array, a reflection / lens system, a copper-nickel alloy cathode, a Ru-doped PbO2 anode, a Ti5O7 / Ti3O4 composite photocatalytic parallel-connection multi-tube plate and the like is built, a distributed silicon photodiode and a quantum dot fluorescent probe sensor are installed, a machine learning algorithm is utilized, and according to the reactant concentration and the by-product generation condition, the quantum dot fluorescent probe sensor and the quantum dot fluorescent probe sensor are analyzed. Light field conditions (wavelength, intensity and distribution) used by photocatalysis, electric field conditions (current, voltage and power line distribution) used by electrocatalysis and flow field conditions (flow velocity, flow rate and distribution) are dynamically adjusted to optimize the chemical reaction rate, and an AI model is combined to predict an optimal multi-field coupling setting scheme, so that the efficiency is improved, the energy consumption is reduced, and the cost is reduced. Meanwhile, the effect of enhancing the catalytic conversion reaction is achieved.

The embodiment of the invention provides a high-speed germanium-silicon photodiode and a manufacturing method thereof, and belongs to the technical field of photoelectric detection equipment. The high-speed germanium-silicon photodiode comprises a wafer; the silicon lens is arranged on the first plane of the wafer; the germanium absorption layer is arranged on the second plane of the wafer, the center of the germanium absorption layer is aligned with the center of the silicon lens, and one surface, opposite to the second plane, of the germanium absorption layer is a photosensitive surface; a first electrode disposed on the second plane; the second electrode is arranged on the photosensitive surface and completely covers the photosensitive surface; the passivation layer is arranged on the second plane and covers and wraps the germanium absorption layer, the first electrode and the second electrode; incident light is converged to the wafer through the silicon lens and then enters the germanium absorption layer to be absorbed, and the incident light which is not absorbed continues to sequentially penetrate through the germanium absorption layer and the passivation layer to reach the second electrode and then is reflected back to the germanium absorption layer to be absorbed again. The high-speed germanium-silicon photodiode can be matched and inversely packaged, and has high responsivity and high equivalent aperture.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and / or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb / s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

To provide systems and methods for eye tracking for use in various applications such as virtual reality or augmented reality applications that include head-mounted display devices.SOLUTION: An eye tracking subsystem may be provided, comprising a plurality of assemblies, each including a light source such as an LED, a light detector such as a silicon photodiode, and a polarizer configured to prevent light reflected via specular reflection from reaching the light detectors so that only scattered light is detected by the light detectors. Machine learning or other techniques may be used to track or otherwise determine a gaze direction of a user, which may be used by one or more components of an HMD device to improve its functionality in various ways.SELECTED DRAWING: Figure 5

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

A portable vein viewer apparatus may be battery powered and hand-held to reveal patient vasculature information to aid in venipuncture processes. The apparatus comprises a first laser diode emitting infrared light, and a second laser diode emitting only visible wavelengths, wherein vasculature absorbs a portion of the infrared light causing reflection of a contrasted infrared image. A pair of silicon PIN photodiodes, responsive to the contrasted infrared image, causes transmission of a corresponding signal. The signal is processed through circuitry to amplify, sum, and filter the outputted signals, and with the use of an image processing algorithm, the contrasted image is projected onto the patient's skin surface using the second laser diode. Revealed information may comprise vein location, depth, diameter, and degree of certainty of vein locations. Projection of vein images may be a positive or a negative image. Venipuncture needles may be coated to provide visibility in projected images.

The application discloses a PIN type back incidence germanium-silicon photodiode based on inductance peaking, and the photodiode structure sequentially comprises a back incidence area, an absorption area and a collection area from top to bottom; the back incidence area comprises a silicon substrate and silicon microlenses formed by etching on the back surface of the silicon substrate; the absorption area comprises a doped area and a germanium absorption layer, the built-in electric field is formed by P-type and N-type doping of the doped area, and the germanium absorption layer is used for absorbing incident photons and generating photo-generated carriers; the collection area comprises a self-alignment resistance layer, an interlayer dielectric layer, a coplanar waveguide electrode and a metal bump, and the geometric parameters of the coplanar waveguide electrode are optimized to introduce a compensation inductance L p The inductance peaking is realized, so that the bandwidth of the photodiode is optimized; the metal bump is arranged on the surface of the coplanar waveguide electrode to realize flip-chip bonding of the photodiode and an external circuit. p The bandwidth of the device can be significantly improved under the premise of ensuring high responsivity and low dark current.

A portable vein viewer apparatus may be battery powered and hand-held to reveal patient vasculature information to aid in venipuncture processes. The apparatus comprises a first laser diode emitting infrared light, and a second laser diode emitting only visible wavelengths, wherein vasculature absorbs a portion of the infrared light causing reflection of a contrasted infrared image. A pair of silicon PIN photodiodes, responsive to the contrasted infrared image, causes transmission of a corresponding signal. The signal is processed through circuitry to amplify, sum, and filter the outputted signals, and with the use of an image processing algorithm, the contrasted image is projected onto the patient's skin surface using the second laser diode. Revealed information may comprise vein location, depth, diameter, and degree of certainty of vein locations. Projection of vein images may be a positive or a negative image. Venipuncture needles may be coated to provide visibility in projected images.

The utility model relates to the technical field of optical modules, and particularly discloses a four-channel germanium-silicon photodiode receiving array chip which comprises an optical input port I1 and a photodiode PD1, the optical input port I1 is connected with an optical receiving end of the photodiode PD1, and an electric output end of the photodiode PD1 is connected with a PD1 + end and a PD1-end arranged on the chip. The objective of the utility model is to solve the problems of high cost, low production efficiency and low yield of a 400G DR4 optical module using four separated photodiodes in the prior art.

The invention relates to a silicon photodiode type solar illumination intensity intelligent monitoring device based on an STM platform. The silicon photodiode type solar illumination intensity intelligent monitoring device comprises a base, a supporting rod is fixedly installed on the top of the base, a control box is fixedly installed on the front face of the supporting rod, a solar panel is fixedly installed on the front face of the supporting rod, and a driving assembly is rotationally installed on the top of the supporting rod. According to the silicon photodiode type solar illumination intensity intelligent monitoring device based on the STM32 platform, a two-channel detection system is formed by a silicon photodiode array and a wide-spectrum response sensor, silicon photodiodes are responsible for ultraviolet-visible light wave bands, the wide-spectrum response sensor covers visible light-near-infrared wave bands, the full-spectrum covering capacity is enhanced through complementation, and the detection accuracy is improved. The angle information is obtained through the positioning module, different angle information and illumination intensity information are stored, the monitoring accuracy is improved, the situation that the monitoring accuracy is influenced by rotation influenced by wind power is avoided, intelligent control is conducted through an STM platform in the whole monitoring process, and management is not needed.

A process for fabricating an optoelectronic device having a germanium-on-silicon photodiode coupled to an Si3N4 waveguide includes producing a semiconductor substrate having a semiconductor stack of thin layers configured to form segments of a semiconductor structure of the photodiode, producing a photonic substrate having the Si3N4 waveguide, and transferring and bonding the semiconductor substrate to the photonic substrate. The photodiode is produced by photolithography and etching of the semiconductor stack to form the semiconductor structure which is then located above the waveguide.

An imaging device includes a stack formed by a first silicon photodiode and a second photodiode based on quantum dots. The first silicon photodiode is arranged between a side of the stack configured to receive incident light and the second photodiode. The incident light includes infrared wavelengths and visible wavelengths. A filter positioned between the first silicon photodiode and the second photodiode reflects visible wavelengths back to the first silicon photodiode and passes infrared wavelengths through to the second photodiode.

The invention relates to a silicon photodiode wide-spectrum strong light damage real-time detection device, and belongs to the field of optical detector performance detection. The device comprises a wide-spectrum strong light measurement performance detection part and a wide-spectrum strong light tolerance performance detection part, the wide-spectrum strong light measurement performance detection part is mainly used for real-time detection of the wide-spectrum strong light measurement performance of the silicon photodiode, and the wide-spectrum strong light tolerance performance detection part is mainly used for real-time detection of the wide-spectrum strong light tolerance performance of the silicon photodiode. The two parts take respective detected silicon photodiodes as wide-spectrum strong light detectors, and acquire real-time output current of the respective detected silicon photodiodes through respective operational amplifiers, shunt resistors, anti-phase input end resistors and bridging resistors; and thus, the real-time wide-spectrum strong light measurement performance and the wide-spectrum strong light tolerance performance of the silicon photodiode can be obtained. The device has the characteristics of high timeliness for detecting the limit performance of the silicon photodiode, simplicity, intuition, convenience in use and high reliability.

A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced apart from the first conductive area; a plurality of randomly arranged metal nanoparticles formed on the silicon substrate; an antireflective layer covering the metal nanoparticles; a first contact passing through the antireflective layer and connected to the first conductive layer; and a second contact passing through the antireflective layer and connected to the second conductive layer.

Scalable in-sensor visual processing arrays of dual-gate amorphous-silicon photodiodes, which are used for multiplexed event sensing at sub-ms precision and edge detection of multiple objects, respectively. Both arrays are built in ca. 200-μm pitches and consume zero static power via their bias conditions; their analog output directly captures the amplitude of event-driven light changes and light intensities on the object edges without complex digitization circuits. Capable of processing both temporal and spatial visual information, these arrays emulate the signaling pathways in the human retina, suggesting a path towards large-scale analog in-sensor visual processing systems.

The photovoltaic auxiliary staged bootstrap DC-DC boost conversion circuit comprises a DC power supply circuit, a self-excited blocking oscillation circuit, a photovoltaic biasing circuit, a full-wave rectification circuit, a voltage monitoring circuit, an energy storage capacitor Cr and a load RL. According to the circuit, an NJFET-NMOS staged migration bootstrap starting mechanism is adopted, initial positive feedback is established under extremely low voltage through a depletion type NJFET, and when grid voltage reaches an NMOS threshold value, a main switch process is taken over by an NMOS, so that on resistance is reduced, and energy injection is accelerated. Meanwhile, direct current bias is provided for the grid electrode through a silicon photodiode bias circuit structure, and conduction of the NMOS is accelerated; smooth transition from an under-voltage region to a steady-state region is realized by combining voltage real-time monitoring and a self-adaptive conduction path. The problem that rapid self-driven starting and steady-state energy output of an ultra-low-voltage self-powered system are difficult is solved.

The invention discloses a high-sensitivity Raman detection method and device based on an MOEMS scanning grating, and belongs to the technical field of optical detection.The high-sensitivity Raman detection device based on the MOEMS scanning grating comprises a continuous laser light source used for emitting continuous laser; the light chopper is used for carrying out pulse modulation on the continuous laser and enabling the modulated pulse laser beam to enter the beam splitter or the silicon photodiode; the spectrograph is used for splitting the pulse Raman scattering light signal to obtain a measured signal and inputting the measured signal to the lock-in amplifier, and the spectrograph comprises an MOEMS scanning grating structure; continuous laser is modulated through the double-circle photochopper, two reference signals with the 90-degree phase difference are obtained through the physical structure of the photochopper, vector operation is carried out by adopting the MOEMS scanning grating light splitting technology in combination with the double-path phase-locked amplification technology, and the amplitude of the pulse Raman scattering light signal is obtained through the phase-locked amplification technology. And the real signal amplitude is extracted, and the influence of phase drift is eliminated.

The invention discloses an intelligent fluorescence spectrophotometer system, and relates to the technical field of fluorescence analysis instruments, the intelligent fluorescence spectrophotometer system comprises a light source module, a first light splitting part, a sample chamber, a second light splitting part, a fluorescence detection part and a control processing module, excitation light generated by the light source module adopting an LED excitation light source is irradiated to a sample in the sample chamber through light splitting treatment of the first light splitting part; fluorescence emitted by a sample is subjected to light splitting treatment by the second light splitting part and is input into the fluorescence detection part adopting the silicon photodiode detector to obtain a fluorescence spectrum signal, and the control processing module controls the light splitting wavelengths of the first light splitting part and the second light splitting part to realize advanced synchronous fluorescence scanning; and the control processing module optimizes the signal-to-noise ratio of the fluorescence spectrum signal in real time by using a digital signal processing algorithm. The low-cost LED excitation light source and the silicon photodiode detector are selected, the control processing module controls the light splitting wavelength and optimizes the signal-to-noise ratio, and the advanced analysis function is achieved on a miniaturized platform on the premise that the high-fidelity signal-to-noise ratio is achieved.

A novel, modified MEMS accelerometer with additional ability to measure optical radiation due to integration of silicon photodiode in the silicon cap. The silicon cap is used to protect the MEMS based accelerometer from the environment. The function of the cap is enhanced to include optical measurement. The entire sensor element including accelerometer and photodiode (XL+PD) occupies no more space than the XL alone.

The invention provides a soil total nitrogen content detection device. A detection body of the device is provided with a feed port and a filter screen, and a built-in hydraulic machine efficiently crushes soil through a lifting rod, a free steel plate and a hydraulic jack structure; the detection chamber is provided with multi-band LED lamps which are annularly arranged to emit light, a central silicon photodiode and an indium gallium arsenide diode are matched to form a dual-channel photoelectric detection system, and spectral signals are accurately collected; the side wall negative ion generator is used for electrostatic dust removal through a carbon fiber brush and is synchronously matched with a dust collecting pipe inclined by 135 degrees to realize gas-solid separation; the bottom carbon fiber heating tube accurately controls temperature and dehumidifies through an H-bridge driving circuit, and moisture interference is avoided. After the signal is processed by the ESP32 single chip microcomputer, the influence of the soil texture on the detection result is eliminated by combining a soil granularity characteristic wave band correction algorithm. The device can obtain the total nitrogen content of the soil in real time, losslessly and rapidly, the efficiency is remarkably improved compared with a traditional chemical detection method, and the device is suitable for a modern agricultural precise fertilization scene.

The invention discloses a device and a method for measuring the optical performance of a fluorescence conversion crystal, and the device comprises a laser, a sample bearing box, an optical fiber probe, a spectrometer, a silicon photodiode, an acquisition card and a computer, and the sample bearing box can be connected with the optical fiber probe or the silicon photodiode. The spectrum information, the afterglow attenuation characteristics, the conversion efficiency and the conversion efficiency uniformity information are acquired through a spectrograph or an acquisition card, and finally the emission spectrum, the afterglow attenuation characteristics, the conversion efficiency and the conversion efficiency uniformity are obtained through computer processing. Performance indexes collected by the device are complete, a complete crystal quality evaluation system can be constructed, and a complete and reliable reference is provided for screening of conversion crystals. And the sample to be measured is arranged in the sample bearing box with the closed periphery, so that the interference of ambient light can be effectively resisted, and the accuracy of performance measurement is improved.

The invention discloses a retinal vessel three-dimensional imaging system and method based on an ultra-wide-angle laser fundus camera, and relates to the field of medical imaging devices. The problems that layered imaging cannot be achieved through single-wavelength laser in existing fundus imaging, and the scanning angle of an existing dual-wavelength confocal system is limited are solved. The system comprises a multi-wavelength laser generating unit, a semi-transmitting and semi-reflecting element, a galvanometer unit, a chromatic aberration lens, a sample to be detected, a focusing lens and a detector with a pinhole, laser emitted by the multi-wavelength laser generating unit is reflected by the semi-transparent and semi-reflective element, then sequentially passes through the galvanometer unit and the chromatic aberration lens, is emitted to a to-be-detected sample, sequentially passes through the chromatic aberration lens, the galvanometer unit, the semi-transparent and semi-reflective element and the focusing lens after being reflected by the to-be-detected sample, is received by the detector with a pinhole, and reaches the silicon PM; a multi-wavelength retina confocal image is generated from the signals acquired by the silicon PM. The method is also suitable for the field of full-layer three-dimensional imaging from the retina nerve fiber layer to the choroid.

This invention discloses a portable high-flux-rate synchrotron radiation X-ray air kerma measurement device. This invention relates to the field of X-ray air kerma measurement technology, and proposes the following solution: It includes a silicon photodiode, a front shielding plate, a middle frame, and a rear shielding plate. A detector window is provided at the center of the front shielding plate, and a beryllium plate is mounted on the back of the detector window. The silicon photodiode is fixedly mounted on a base, which is also fixedly mounted on the front shielding plate. Mounting holes are provided on the rear shielding plate. This invention, by being installed within the front, middle, and rear shielding plates, possesses the characteristics of miniaturization and portability, making it suitable for small laboratories and portable use. Unlike free air ionization chambers, silicon photodiodes have high quantum efficiency, low dark current, strong radiation resistance, insensitivity to external magnetic fields, and do not require external bias voltage for measurement. Furthermore, their small size makes them easy to move.

The application discloses a high-sensitivity Raman detection method and device based on a MOEMS scanning grating, and belongs to the technical field of optical detection, and the technical solution points of the application are as follows: a continuous laser light source is used for emitting continuous laser light; a light chopper is used for pulse-modulating the continuous laser light, and the pulse-modulated laser beam is incident to a light splitting sheet or a silicon photodiode; a spectrometer is used for splitting the pulse Raman scattering light signal, obtaining a measured signal, and inputting the measured signal into a phase-locked amplifier, and the spectrometer comprises a MOEMS scanning grating structure; and the phase-locked amplifier is used for obtaining the amplitude of the pulse Raman scattering light signal according to the measured signal, wherein the application modulates the continuous laser light through a double-ring light chopper, two reference signals with a 90-degree phase difference are obtained by using the physical structure of the light chopper, the MOEMS scanning grating splitting technology is adopted, the vector operation is combined with the double-path phase-locked amplification technology, the real signal amplitude is extracted, and the influence of phase drift is eliminated.

A weak vibration deformation detection circuit of the present invention includes a photodiode circuit, an amplifier circuit, a differentiator circuit, a shaping circuit, and a gating circuit connected in sequence; parallel light rays are incident on a linear array silicon photodiode circuit through a lens; weak electrical signals are buffer-amplified and primarily amplified by the amplifier circuit part; the differentiator circuit part outputs to the shaping circuit part after receiving the amplified signals from the previous-stage amplifier circuit; after receiving the electrical signals transmitted by the differentiator circuit, the shaping circuit obtains a difference signal and outputs it; the driving signal output by the shaping circuit is used in cooperation with a gating logic gate circuit with different periodic pulse signals to obtain pulse signals with different time intervals and periodic outputs, and the pulse signals are converted into vibration deformation intensity pulses; the vibration intensity or deformation amount information is deduced by determining the deformation or vibration amplitude using the output pulse intensity. The circuit of the present invention has low implementation complexity, and the detection results are sensitive and accurate, and it is applicable to various industrial sites.

The utility model discloses a scintillator afterglow testing device which comprises an operation all-in-one machine, an X-ray source and a shielding box, a movable base with universal wheels is arranged at the bottom of the shielding box, an operation platform with a keyboard and a mouse is arranged on the upper side of the front face of the shielding box, the operation all-in-one machine is fixed on the shielding box through a mounting frame, the X-ray source is located in the shielding box, and the X-ray source is located in the shielding box. A test platform fixing plate is arranged in the shielding box, a scintillator placing plate is arranged on the test platform fixing plate, a silicon photodiode and a scintillator for testing are arranged on the scintillator placing plate, the scintillator is located above the silicon photodiode, and a movable guide rail is arranged in the shielding box. The production cycle of products and the production cost of manufacturers are reduced; and the safety is better.

The invention relates to the technical field of bridge quality monitoring, in particular to a bridge concrete quality monitoring method and system based on edge detection, and the method comprises the steps: S1, image collection and dynamic standardization; s2, concrete surface pretreatment; s3, concrete crack edge detection; s4, quantifying the geometrical characteristics of the crack; and S5, performing quality grading and disposal. According to the scheme, the unmanned aerial vehicle carries a multispectral camera to realize automatic acquisition of bridge concrete surface images, flies in a grid path, and is matched with a silicon photodiode sensor to obtain environmental illumination in real time, illumination correction is performed on the images through a dynamic compensation coefficient, and overexposure / underexposure influences are eliminated. In the preprocessing stage, median filtering and a CLAHE algorithm are adopted, and noise interference is reduced while edge features are effectively reserved. Compared with traditional manual inspection or fixed camera shooting, the process has the advantages that data acquisition uniformity and image quality are greatly improved, and subjective errors of manual operation are avoided.

The utility model relates to the technical field of optical modules, and particularly discloses an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which comprises an optical input port I1, a wavelength division multiplexer, a photodiode PD1, a photodiode PD2, a photodiode PD3 and a photodiode PD4, the optical input port I1 is connected with the optical input end of the wavelength division multiplexer, the first optical output end of the wavelength division multiplexer is connected with the optical receiving end of the photodiode PD1, and the second optical output end of the wavelength division multiplexer is connected with the optical receiving end of the photodiode PD2. A third light output end of the wavelength division multiplexer is connected with a light receiving end of the photodiode PD3, and a fourth light output end of the wavelength division multiplexer is connected with a light receiving end of the photodiode PD4. The objective of the utility model is to solve the problems of high cost, low production efficiency and low yield of a 400G FR4 coarse-wave light splitting module, an MUX using an optical waveguide technology and a separated photodiode array in the prior art.

The invention relates to an alkali metal iodide-based luminescent material for radiation detection and a preparation method thereof, the alkali metal iodide-based luminescent material comprises Cu < + > doped alkali metal iodide, and the Cu < + > doped alkali metal iodide comprises NaI: Cu. Cu < + > is selected as a luminescent center material to be doped in the alkali metal iodide crystal, an isolated energy band state can be introduced into an energy band structure of the alkali metal iodide crystal, a band gap structure of the alkali metal iodide crystal is regulated and controlled, exciton localization is remarkably enhanced, and strong-broadband flickering luminescence is obtained when high-energy ray excitation is carried out; the emission wavelength is matched with the sensitive wavelength of the silicon photodiode, efficient radiation detection can be achieved after the two are coupled, doping of traditional high-cost rare earth elements and high-toxicity T1 elements is replaced, the risk of heavy metal to the environment and the health of a user is effectively avoided, and the cost of the material is greatly reduced.