Radiator

A heat sink and carbon nanotube technology, applied in the field of heat transfer, can solve problems affecting the performance of the central processing unit

Inactive Publication Date: 2007-05-16
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
View PDF0 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the performance of the central processing unit will be seriously affected, and it is necessary to dissipate heat from the MOSFET

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radiator
  • Radiator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0015] Referring to Fig. 1, the radiator 10 provided by the embodiment of the present invention includes: a base 20 having a first surface 21 and a second surface 22 opposite to the first surface 21; a plurality of Carbon nanotubes 30 , the plurality of carbon nanotubes 30 extend outward from the first surface 21 of the substrate 20 through the second surface 22 .

[0016] The substrate 20 can be selected from a polymer material, such as one of polymer materials such as silicone rubber, polyester, polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, epoxy resin, polyoxymethylene, and polyacetal. species or a mixture of several. The thickness of the substrate 20 should not be too thick, nor should it be too thin. Too thick is not conducive to heat dissipation, and too thin will reduce its holding force on the carbon nanotubes 30, causing the ca...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
thicknessaaaaaaaaaa
heightaaaaaaaaaa
Login to view more

Abstract

The provided radiator comprises: a substrate with two surfaces, and multiple nano carbon pipes to pass through the second surface from the first one of the substrate outwardly. This invention makes full use of supper performance of nano carbon pipe to have well performance and small size.

Description

【Technical field】 [0001] The invention relates to the field of heat transfer, in particular to a radiator and a manufacturing method thereof. 【Background technique】 [0002] With the continuous advancement of integrated circuit technology and the continuous improvement of industrial application requirements, the electronic information industry is booming and rapid, the application of computers is popularized, and the speed of its replacement is accelerating. Therefore, the core component of the computer - the central processing unit The operating frequency of the computer is getting higher and higher, and high-frequency and high-speed processors are continuously introduced, but the higher the operating frequency of the processor, the more heat it generates per unit time, and the accumulation of heat will cause the temperature to rise, which will lead to its operating performance including stability. Therefore, it is necessary to dissipate the heat generated by it in time. At...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/367H01L21/48
CPCH01L23/373H01L23/3677H01L2924/0002
Inventor 林孟东
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap