Programmable logic device memory elements with elevated power supply levels

Abstract

Programmable logic device memory elements with elevated power supply levels are provided. The programmable logic device integrated circuits contain programmable core logic powered at a programmable core logic power supply voltage. Programmable logic device configuration data is loaded into the memory elements to configure the programmable core logic to perform a custom logic function. During normal operation the memory elements may be powered with a power supply voltage that is larger than the programmable core logic power supply voltage. During data loading operations, the memory elements may be powered with a power supply voltage equal to the programmable core logic power supply voltage. Data loading and reading circuitry loads data into the memory elements and reads data from the memory elements. Address signals are generated by the data loading and reading circuitry. The address signals may have larger voltage levels during data writing operations than during read operations.

Description

technical field [0001] The present invention relates to memory cells, and more particularly, to volatile memory cells having boosted output voltages for integrated circuits such as programmable logic devices. Background technique [0002] Integrated circuits often contain multiple volatile memory cells. A typical volatile memory cell is based on cross-coupled inverters (latch) and is used to store data. Each memory cell can store one bit of data. [0003] Volatile memory cells are often used to store configuration data in programmable logic devices. A programmable logic device is a type of integrated circuit that can be customized in relatively small batches to implement a desired logic design. In a typical scenario, a PLD manufacturer pre-designs and manufactures an off-the-shelf PLD integrated circuit. Logic designers then use the logic design system to design custom logic circuits. The logic design system utilizes information about the hardware capabilities of the ma...

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Problems solved by technology

If the gate voltage of the p-channel turn-off transistor is too low, the transistor will not be turned off properly and an undesirably large leakage current will occur

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