Film forming apparatus and gasifier

A film-forming device and film-forming technology, applied in gaseous chemical plating, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as futility

Inactive Publication Date: 2007-05-23
TOKYO ELECTRON LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even if the filter is used to reduce the amount of particles entering the film formation chamber from the gas supply line, it may be in vain

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film forming apparatus and gasifier
  • Film forming apparatus and gasifier
  • Film forming apparatus and gasifier

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0103] (First Embodiment) [Detailed structure of raw material gasification section and feed path of raw material gas]

[0104] FIG. 2 is a longitudinal sectional view showing the structure of the above-mentioned raw material vaporization unit 120 in more detail. The raw material vaporization part 120 has heating means 123 such as a heater provided in a partition wall of the vaporization vessel 121 that partitions the raw material vaporization space 120A. The vaporization surface 120B is heated by the heating means 123, and the inside of the raw material vaporization space 120A is also heated by the radiated heat from the vaporization surface 120B. An opening 124 is provided in the vaporization container 121 , and a filter 125 is disposed between the opening 124 and the raw material vaporization space 120A. If a filter is installed elsewhere in the feed path of the raw material gas, the filter 125 may not be used. In addition, the opening 124 is connected to a detection pipe ...

no. 2 example

[0134] [Transportation route of raw material gas]

[0135] In the present embodiment, the raw material gasification unit 120 is arranged above the film forming unit 130 , and the transport path portion composed of the raw material gas transport line 150S and the raw material gas transport line 150T leading out from the raw material gasification unit 120 is configured as much as possible. The bending parts are reduced, and the bending angle of each bending part is reduced. The bending part of the conveying path produces a pressure loss in the pipeline. The larger the bending angle, the greater the pressure loss. This will cause pressure fluctuations in the raw material gas, and the possibility of solidification in the pipeline is high. Therefore, in order to reduce the particles generated in the conveying path As mentioned above, it is effective to reduce the bending portion as much as possible and reduce the bending angle.

[0136] As described above, the line filter 150F ma...

no. 3 approach

[0148] (Third Embodiment) [Structure of Film Formation Section]

[0149] Next, the internal structure of the film formation part 130 of this embodiment is demonstrated with reference to FIGS. 11-13. As shown in FIG. 11 , the film forming part 130 is provided with a gas introduction part 132 on a part of the partition wall (the upper part of the figure) of the film forming container 131 as described above, and the raw material gas and the reaction gas flow from the gas introducing part 132 to the film forming container 131. The inside of the above-mentioned base 133 is introduced. The gas introduction part 132 is provided with a plurality of source gas introduction ports 132a for introducing the above-mentioned source gas inside and a plurality of reaction gas introduction ports 132b for introducing the above-mentioned reaction gas inside, which is a so-called post-mixing type nozzle. Shower structure. In addition, the gas introduction part 132 has a laminated plate structure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to view more

Abstract

A film forming apparatus having a raw material supplying section for supplying a raw material composed of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the raw material gas formed, wherein a filter (153) is provided on the way of the transport path for the raw material gas from the raw material vaporizing section to an introduction port of the film forming section, and wherein an outer edge (153a) of the filter (153) is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member (158), which is less prone to be deformed by a loading in the direction of pressing than the above outer edge (153a), and is fixed to the inner surface of the transport path in a state of being compressed between the inner surface of the transport path and the supporting member (158).

Description

technical field [0001] The present invention relates to a film forming apparatus, and more particularly to a structure of an apparatus for forming a film using a raw material gas obtained by vaporizing a raw material in a liquid or gas-liquid mixed state, such as an organic metal. The present invention also relates to a vaporizer applicable to the above-mentioned film forming apparatus. Background technique [0002] A film forming apparatus such as CVD ( Chemical vapor deposition) devices are already known. A typical example of this kind of film formation equipment is MO (organic metal) CVD equipment, which can be used to form high dielectric constant thin films such as PZT (Pb-Zr-Ti oxide) and BST (Ba-Sr-Ti oxide) , a metal thin film such as W, or a semiconductor thin film such as InP (for example, refer to JP10-177971A). CVD is classified into thermal CVD, optical CVD, plasma CVD, etc. according to the energy supply method for generating chemical reactions. [0003] In...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C23C16/44
Inventor 饭塚八城安室章木村宏一郎辻德彦
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products