Nitride semiconductor laser element and fabrication method thereof
A technology of nitride semiconductors and laser components, which is applied in the direction of semiconductor lasers, laser components, and optical waveguide semiconductor structures, and can solve problems such as inability to achieve optical output, low yield, and easy sudden breakdown.
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example 1
[0095] The structural outline of the nitride semiconductor laser element 10 of this example is shown in Figure 5 shown in the external perspective view. The structure of this nitride semiconductor laser element 10 will be described below in the manner of its manufacturing process.
[0096]In the nitride semiconductor laser element 10 of this example, in the surface of the n-type GaN substrate 101 , grooves 100 are formed at intervals of 400 μm so as to be disposed above the defect dense regions 117 . Then, on the first main plane of the n-type GaN substrate 101 having grooves 100 formed at intervals of 400 μm, the following layers are sequentially formed: an n-type GaN lower contact layer 102 having a thickness of 2.5 μm; 3.0μm n-type Al 0.05 Ga 0.95 N lower cladding layer 103; by In x1 Ga 1-x1 N quantum well layer and In x2 Ga 1-x2 Active layer 105 composed of N barrier layers alternately arranged (where x1>x2); p-type Al with a thickness of 0.01 μm 0.3 Ga 0.7 N ant...
example 2
[0101] The structural outline of the nitride semiconductor laser element 10a of this example is shown in Image 6 shown in the external perspective view. The structure of this nitride semiconductor laser element 10a will be described below in the manner of its manufacturing process. exist Image 6 In the structure of the nitride semiconductor laser element 10a shown in Figure 5 The parts found in the nitride semiconductor laser element 10 shown in are denoted by the same reference numerals, and thus detailed explanations thereof will not be repeated below. Unlike Example 1, in this example, striped grooves 115a are formed in the wafer instead of grooves 115 .
[0102] In the nitride semiconductor laser element 10a of this example, the interval between the grooves 100 formed in the n-type GaN substrate 101 is 300 μm, and, on the first principal plane of the n-type GaN substrate 101, the following layer Formed sequentially: n-type GaN lower contact layer 102 with a thicknes...
example 3
[0109] The structural outline of the nitride semiconductor laser element 10b of this example is shown in Figure 7 shown in the external perspective view. The nitride semiconductor laser element 10b is described below through its manufacturing process. exist Figure 7 In the structure shown in the nitride semiconductor laser element 10b, also find Figure 5 Portions of the nitride semiconductor laser element 10 shown are denoted by the same reference numerals, and explanations thereof will not be repeated.
[0110] In the nitride semiconductor laser element 10b of this example, an n-type GaN substrate 101 in which defect-dense regions and low-defect regions are alternately arranged at intervals of 400 μm is used. First, on n-type GaN substrate 101 , grooves 100 with a width of approximately 5 μm are formed at intervals of approximately 80 μm and a depth of approximately 3 μm so as to be disposed on both sides of defect-intensive region 117 at intervals of approximately 400 ...
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