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Initiating structure used for manufacturing tiny mechanical devices and method for forming tiny mechanical devices

A micro-machine, sacrificial layer technology, applied in the manufacture of micro-structure devices, processes for producing decorative surface effects, micro-structure technology, etc., can solve problems such as special use for people, structural manufacturing problems, and incompatibility of manufacturing methods and equipment.

Inactive Publication Date: 2011-10-05
XEROX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can create structural and manufacturing issues as additional layers are required to protect areas damaged during such release
Other solutions to these problems include the use of complex materials that are not widely used, are specific to humans, and are not compatible with certain manufacturing methods and equipment

Method used

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  • Initiating structure used for manufacturing tiny mechanical devices and method for forming tiny mechanical devices
  • Initiating structure used for manufacturing tiny mechanical devices and method for forming tiny mechanical devices
  • Initiating structure used for manufacturing tiny mechanical devices and method for forming tiny mechanical devices

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Embodiment Construction

[0028] exist figure 1 In , the initial structure 1 of a micromechanical device fabricated using MEMS technology is represented. Although specific embodiments are described with reference to a starting structure 1 for making a deformable membrane (in an electric field) for ink drop ejection, it should be understood that similar starting structures can be used to make other end products; only specific Materials can replace special materials within layers 2-8. In any case where a gap is required in the final product and two sacrificial layers are required to form this gap, the initial structure 1 can use alternative materials for the non-sacrificial layers. exist figure 1 In , the silicon wafer layer 2 is used as the base wafer. A layer 3 of thermal oxide SiO2 is positioned on layer 2 . Layer 4 is a polycrystalline (Si) layer and layer 5 is a SiO2 layer. Layers 2-5 constitute the underlying layered structure 9, which is protected during the etching process. Layer 3 (thermal...

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PUM

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Abstract

An original structure for making a micro-mechanical device, which is provided with a plurality of layers in the operation arrangement, each layer is stacked up by sequence with each other. The layers include a first sacrifice layer, a second sacrifice layer and a required bottom layer, the first sacrifice layer has material etching performance similar to the required bottom layer, the second sacrifice layer has material etching performance completely different from the required bottom layer, in which, the second sacrifice layer approximately stands up the material for removing the first sacrifice layer, and can protect the bottom layer when the first sacrifice layer is removed by etching.

Description

technical field [0001] The present invention relates to MEMS (Micro-Electro-Mechanical Systems) technology, and more particularly to structures and methods of producing micro-mechanical devices. Background technique [0002] MEMS technology includes the fabrication of micron (10 -6 Structures and methods of electromechanical devices with components of meter) size, especially fabricated in silicon using standard fabrication equipment. MEMS are often used in defense applications, but are now increasingly used in sensors, industrial and home controllers, electronic components, computer peripherals, vehicle and aerospace electronics, analytical instruments, and office equipment. Although this disclosure will generally refer to office equipment and inkjet technology, it is understood that the embodiments disclosed herein may be used in any suitable field utilizing MEMS. MEMS products offer great advantages, such as the configuration of sensing, computing, communication and powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B3/00B41J2/16B41J2/14
CPCB41J2/16B41J2/14B41J2/1639B81C1/00801B81C2201/0109B81C2201/014B81B2201/052B81C2201/0133B41J2002/043B41J2/1626
Inventor P·J·尼斯特伦N·贾K·刘
Owner XEROX CORP