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Static-resisting feature enhanced LED part

A technology of light-emitting devices and light-emitting layers, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of not bringing obvious improvement effects, and achieve the effects of improving antistatic properties, increasing resistivity, and improving reliability

Inactive Publication Date: 2007-07-11
清芯光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Despite great efforts, there has been no significant improvement

Method used

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  • Static-resisting feature enhanced LED part
  • Static-resisting feature enhanced LED part

Examples

Experimental program
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Embodiment Construction

[0012] Figure 1 is a graph of the current and voltage of a general diode. The ideal diode is that even if the reverse voltage increases, the increment of the reverse current is very small, but in fact, as shown in the figure, when the reverse voltage exceeds a certain critical point, the junction will break down and reverse The current increases sharply and destroys the diode.

[0013] According to the present invention, a leakage path is formed to avoid overvoltage during reverse driving, and at the same time improve the resistance of the light-emitting device to reverse inrush current.

[0014] Fig. 2 is a general structure of a conventional LED chip. Generally, the N-layer electrode and the P-type layer of the chip are not connected.

[0015] Fig. 3 is a structural diagram and an equivalent circuit diagram provided by the present invention.

[0016] As shown in the figure, part of the electrode of the N layer contacts part of the mesa of the P-type GaN layer, and has a c...

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Abstract

Ths invention discloses one light diode part to improve anti-static characteristics, which protects parts from damage by static electricity discharge without impact on Gann light parts.

Description

Technical field [0001] The invention relates to a light-emitting diode device mainly composed of a substrate, an N layer, a P layer, and a light-emitting layer to improve antistatic properties, especially to form a resistive leakage path without changing the existing light-emitting device, thereby improving anti-static performance. The problem that the diode is damaged due to the overvoltage generated by its P-N junction when it is driven in the opposite direction. Background technique [0002] Since GaN-based light-emitting devices are sensitive to static electricity, they should be inspected with great care in application fields that require high reliability. When the forward inrush current flows through the GaN-based light-emitting device, the electrical shock will be relieved, while the reverse inrush current will cause overvoltage at the P-N junction due to the obstruction of the current flow, so its structure is very sensitive to the reverse inrush current. If a GaN-b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 金英镐金学峰崔珉镐
Owner 清芯光电有限公司