Method for quantifying uniformity patterns and including expert knowledge for tool development and control

Inactive Publication Date: 2004-04-01
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0032] The present invention provides more specifically defined uniformity metrics that can be correlated to process variables. Correlating process variables to the uniformity metrics allows for improved troubleshooting and refinement and improvement of the semiconductor manufacturing processes.

Problems solved by technology

However, center-fast does not provide a specific, objective and quantitative description of the nonuniformity 106.
However, the 3-sigma metric does not provide any information about the relationship between the etch rates at the different measured points.

Method used

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  • Method for quantifying uniformity patterns and including expert knowledge for tool development and control
  • Method for quantifying uniformity patterns and including expert knowledge for tool development and control
  • Method for quantifying uniformity patterns and including expert knowledge for tool development and control

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Embodiment Construction

[0046] Several exemplary embodiments for quantifying a nonuniformity and correlating the nonuniformity to process variables will now be described. It will be apparent to those skilled in the art that the present invention may be practiced without some or all of the specific details set forth herein.

[0047] As described above, typical prior art descriptions of nonuniformities are often subjective, indefinite and generally are very crude descriptions of the nonuniformities. One primary purpose of qualitatively and quantitatively describing nonuniformities is to provide some assistance in identifying a cause of the observed nonuniformity such as an errant process variable. Indefinite, crude and subjective metrics cannot be accurately correlated to a cause and therefore provide little direction in identifying a cause of the nonuniformity.

[0048] One embodiment uses multivariate analysis techniques to extract additional information from the etch rate data that is measured at several points...

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Abstract

A system and method of for determining multiple uniformity metrics of a semiconductor wafer manufacturing process includes collecting a quantity across each one of a group of semiconductor wafers. The collected quantity data is scaled and a principal component analysis (PCA) is performed on the collected, scaled quantity data to produce a first set of metrics for the first group of semiconductor wafers. The first set of metrics including a first loads matrix and a first scores matrix.

Description

[0001] This application claims priority from U.S. Provisional Patent Application No. 60 / 414021 filed on Sep. 26, 2002 and entitled "Method for Quantifying Uniformity Patterns and Including Expert Knowledge for Tool Development and Control," which is incorporated herein by reference in its entirety.[0002] 1. Field of the Invention[0003] The present invention relates generally to methods and systems of quantifying uniformity of measured quantities on semiconductor wafers, and more particularly, to improved methods and systems for characterizing and analyzing nonuniformities on semiconductor wafers and providing feedback and control to preceding semiconductor manufacturing processes.[0004] 2. Description of the Related Art[0005] Semiconductor wafers undergo numerous processes during the semiconductor manufacturing process. Layers may be added, patterned, etched, removed, polished and many other processes. After each process the wafer is typically examined to confirm the previous proces...

Claims

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Application Information

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IPC IPC(8): H01L21/66
CPCH01L22/20H01L22/00
InventorBAILEY, ANDREW D. IIIYADAV, PUNEETMISRA, PRATIK
OwnerLAM RES CORP