Method of doping organic semiconductors with quinonediimine derivatives

a technology of organic semiconductors and quinonediimine, which is applied in the direction of group 3/13 element organic compounds, sustainable manufacturing/processing, final product manufacturing, etc., can solve the problems of high control and regulation expenses, inability to precisely control the manufacturing process in large technical production plants or those on a technical scale, and disadvantages previously investigated compounds, etc., to achieve the effect of reducing volatility and facilitating the processing of organic semiconductors
US20050121667A1Active Publication Date: 2005-06-09NOVALED GMBH
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
NOVALED GMBH
Publication Date
2005-06-09

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Abstract

The invention relates to the use of an organic mesomeric compound as organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof. In order to be able to handle organic semiconductors more easily in the production process and to be able to produce electronic components with doped organic semiconductors more reproducibly, a quinone or quinone derivative or a 1,3,2-dioxaborine or a 1,3,2-dioxaborine derivative may be used as a mesomeric compound, which under like evaporation conditions has a lower volatility than tetrafluorotetracyanoquinonedimethane (F4TCNQ).
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Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] The present application claims priority to German Patent Application No. 103 57 044.6, filed Dec. 4, 2003, which is incorporated herein by reference in its entirety. BACKGROUND OF THE INVENTION

[0002] The invention relates to the use of an organic mesomeric compound as an organic dopant for doping an organic semiconducting matrix material for varying the electrical properties thereof, a doped semiconducting matrix material, and an electronic component made of the latter.

[0003] The doping of silicon semiconductors has already been state of art for several decades. By this method, an increase in conductivity, initially quite low, is obtained by generation of charge carriers in the material as well as, depending upon the type of dopant used, a variation in the Fermi level of the semiconductor.

[0004] However, several years ago it was also disclosed that organic semiconductors may likewise be strongly influenced with regard to their electr...

Claims

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