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CMP process using slurry containing abrasive of low concentration

a technology of abrasives and slurry, which is applied in the direction of grinding machine components, manufacturing tools, lapping machines, etc., can solve the problems of wasting slurry, affecting and 3% of the slurry used in the cmp process, so as to improve the uniformity of the cmp process and ensure the yield and reliability of the devi

Inactive Publication Date: 2005-06-30
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0010] Accordingly, it is an object of the present invention to provide a method for manufacturing a semiconductor device which can secure yield and reliability of the device by improving uniformity of a CMP process.

Problems solved by technology

Particularly, in case of slurry, less than 3% of the slurry is used in the CMP process, and the rest is wasted.
As a result, studies have been made on reuse of the wasted slurry but its practicability is still in doubt.
When an abrasive particle included in the slurry is large or the abrasive is agglomerated, scratch is generated in a semiconductor device.
The generation of scratch is more affected as concentration of the abrasive particle becomes higher, which may degrade yield and reliability of a semiconductor device.
The residual abrasive in the CMP slurry may be a scratch source, which causes a fatal defect in a device.

Method used

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  • CMP process using slurry containing abrasive of low concentration
  • CMP process using slurry containing abrasive of low concentration
  • CMP process using slurry containing abrasive of low concentration

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Embodiment Construction

[0016] The present invention will be described in detail.

[0017] In the above-described method, the concentration of the abrasive included in the CMP slurry ranges from 0.01 to 0.1 wt %.

[0018] If the concentration of the abrasive is less than 0.01 wt %, the content of the abrasive is too low to achieve the mechanical polishing effect. If the concentration of the abrasive is more than 0.1 wt %, the planarization ability is degraded, and micro-scratch is generated according to increase in concentration of polishing particles in the slurry. Accordingly, a slurry containing an abrasive having a concentration ranging from 0.01 to 0.1 wt % is preferably used in order to maintain the proper polishing speed and minimize the micro-scratch.

[0019] Preferably, the concentration of the abrasive included in the CMP slurry ranges from 0.01 to 0.09 wt %, more preferably 0.05 wt %.

[0020] The abrasive is selected from a group consisting of ceria (CeO2), silica (SiO2), manganese oxide (MnO2) and co...

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Abstract

A CMP process using a slurry containing an abrasive of low concentration is disclosed. More specifically, a planarization process is performed using the slurry containing an abrasive of low concentration of less than 0.1 wt % unlike the conventional CMP slurry, thereby improving uniformity of a CMP process in a manufacture process of a semiconductor device to secure yield and reliability of the device. Particularly, since the disclosed slurry has the more excellent effect of achieving the planarization degree than that of the conventional slurry, the thickness of deposited films before the CMP process can be reduced, and the CMP amount can also be minimized.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a CMP process using a CMP (Chemical Mechanical Polishing) slurry containing an abrasive of low concentration. More specifically, the present invention relates to a method for manufacturing a semiconductor device wherein a planarization process is performed using a slurry containing a less than 0.1 wt % abrasive unlike a conventional CMP slurry to improve uniformity of the CMP process in a manufacture process of a semiconductor device, thereby securing yield and reliability of the device. [0003] 2. Description of the Prior Art [0004] In general, a CMP process is performed to planarize an interlayer insulating film for insulating a pattern formed in a manufacture process of a semiconductor device, or a film or a pattern formed in a process using a metal. The CMP process which is necessary in the planarization process of the semiconductor device manufacture process is performed using a ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/304B24B37/04
CPCB24B37/042H01L21/304
Inventor KIM, CHANG GYUKIM, CHI HONGLEE, TAE WONKANG, HI SOON
Owner SK HYNIX INC
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