Endpoint detecting device in semiconductor manufacturing system

a semiconductor manufacturing system and endpoint detection technology, applied in the direction of semiconductor/solid-state device testing/measurement, electric discharge tubes, thermal excitation analysis, etc., can solve the uneven thickness of a material film between unit regions, the less widely used wet etch process, and the etch process. achieve the effect of improving the filter structur

Inactive Publication Date: 2006-01-26
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0025] Therefore, the present invention is directed to provide an endpoint detecting device having an improved filter structure capable of reading a wide range of plasma wavelength emitted within a process chamber.

Problems solved by technology

In contrast, a wet etch process has been less widely used because of poor wettability, and because etchants tend to infiltrate between a photoresist layer and an underlying material film degrading pattern accuracy
However, as stated above, increasing aspect ratios for adjacent pattern components cause an uneven deposition thickness of a material film between unit regions.
These uneven deposition thickness which are formed during previous processing steps negatively impact the etch process such that it can not be ideally conducted on the entire surface of the wafer.
Furthermore, if an etchant with a lower selectivity is used to increase the etching rate, other problems may occur.

Method used

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  • Endpoint detecting device in semiconductor manufacturing system
  • Endpoint detecting device in semiconductor manufacturing system
  • Endpoint detecting device in semiconductor manufacturing system

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Embodiment Construction

[0035] The present invention will now be described more fully with reference to the accompanying drawings, in which preferred embodiments of the present invention are shown. The present invention may, however, be embodied in different forms and should not be construed as limited to only the embodiments set forth herein. Rather, these embodiments are provided as teaching examples of the present invention. Like numbers in the drawings refer to like elements.

[0036]FIG. 4 is a view illustrating a filtering unit for an endpoint detecting device according to one embodiment of the present invention.

[0037] Referring to FIG. 4, a filter 100 has a polyhedron structure rather than the flat planar structure of the prior art. Filter 100 has at least two incidence surfaces 101 and 102. More specifically, filter 100 illustrated in FIG. 4 has a triangular prism shape. However, filter 100 may have various other polyhedron shapes such as a triangular pyramid, a quadrangular pyramid (pyramid structu...

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Abstract

An endpoint detecting device used during a semiconductor manufacturing process to manufacture semiconductor devices. The endpoint detecting device is constructed such that a filter has a polyhedral shape or a semi-spherical shape.

Description

BACKGROUND OF THE INVENTION [0001] 1. Technical Field [0002] The present invention generally relates to a process endpoint detecting device adapted for use within a semiconductor manufacturing system. More particularly, the present invention generally relates to an endpoint detecting device capable of accurately detecting an etch endpoint during a dry plasma etch process. [0003] A claim of priority is made to Korean Patent Application No. 2004-56177, filed on Jul. 20, 2004, the disclosure of which is hereby incorporated by reference in its entirety. [0004] 2. Discussion of Related Art [0005] With rapid technology developments in the telecommunication field together with the increasing popularity of information media such as computers, semiconductor devices have undergone great technical change. High operating speed, large storage capability, improved functionality, and a high degree of integration are required in contemporary semiconductor devices. With a trend toward higher integra...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23F1/00
CPCG01N21/73H01L22/26H01J37/32963H01J37/32935H01L21/3065
Inventor PARK, BONG-JIN
Owner SAMSUNG ELECTRONICS CO LTD
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