Iridium oxide nanostructure patterning

a technology of patterned iridium oxide and nanowires, which is applied in the field of integrated circuit (ic) fabrication, can solve the problems of inability to form or template metallic nanowires without the use of porous material forms or templates, and add a considerable degree of complexity to the process, and achieve the effect of efficient formation

Active Publication Date: 2006-04-27
SHARP KK
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Problems solved by technology

No processes had been previously reported that are able to form metallic nanowires without the use of porous material forms or templates.
The templates add a considerable degree of complexity to the process.

Method used

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  • Iridium oxide nanostructure patterning
  • Iridium oxide nanostructure patterning
  • Iridium oxide nanostructure patterning

Examples

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Embodiment Construction

[0026]FIG. 1 is a partial cross-sectional view of a patterned iridium oxide (IrOx) nanostructure substrate. The patterned substrate 100 comprises a substrate 102 with a first region 104 and a second region 106 adjoining the first region 104. A first material 108 overlies a second material 110 in the first region 104. A continuous IrOx film 112 with grown IrOx nanostructures 114, having an aspect ratio in the range of 1:1 to 100:1, overlies the first material 108.

[0027] An “aspect ratio” is defined herein to be the length 116 of the nanostructures 114 with respect to the nanostructure diameter 118. IrOx is defined herein to be any iridium oxide compound, where “x” is any value between (and including) the values of zero and 2. In another aspect, the “x” value in the continuous IrOx film 112 is different than the “x” value in the nanostructures. For example, the continuous IrOx film 112 can be Ir (x=0), while the nanostructures 114 are IrOx, where x is greater than zero.

[0028] Typica...

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Abstract

A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.

Description

RELATED APPLICATIONS [0001] This application is a continuation-in-part of a pending patent application entitled, IRIDIUM OXIDE NANOTUBES AND METHOD FOR FORMING SAME, invented by Zhang et al., Ser. No. 10 / 971,280, filed Oct. 21, 2004. [0002] This application is a continuation-in-part of a pending patent application entitled, IRIDIUM OXIDE NANOWIRE AND METHOD FOR FORMING SAME, invented by Zhang et al., Ser. No. 10 / 971,330, filed Oct. 21, 2004. [0003] Both the above-mentioned applications are incorporated herein by reference.BACKGROUND OF THE INVENTION [0004] 1. Field of the Invention [0005] This invention generally relates to integrated circuit (IC) fabrication and, more particularly, to patterned iridium oxide nanostructures and an associated fabrication process. [0006] 2. Description of the Related Art [0007] Recently, the fabrication of nanostructures has been explored, due to its potential importance as a building block in nano, microelectromechanical (MEM), and nanoelectromechani...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/4763H01L21/302
CPCB81C1/00111B82Y10/00H01L21/31111
Inventor ZHANG, FENGYANSTECKER, GREGORY M.BARROWCLIFF, ROBERT A.HSU, SHENG TENG
Owner SHARP KK
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