Method of enlarging contact area of a gate electrode, semiconductor device having a surface-enlarged gate electrode, and method of manufacturing the same

a gate electrode and contact area technology, which is applied in the direction of semiconductor devices, electrical devices, transistors, etc., can solve the problems of polycide layer on the gate electrode, dopants diffraction to the edge portion, and the insufficient incorporation of the silicium layer into the gate electrode by heat treatment, so as to reduce the electrical resistance of the gate electrode
US20060108650A1Inactive Publication Date: 2006-05-25CHO CHAN HYUNG +1
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
CHO CHAN HYUNG
Publication Date
2006-05-25
Estimated Expiration
Not applicable · inactive patent

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Abstract

A highly integrated semiconductor device operates at a high speed due to low resistance at the gate electrode and minimal parasitic capacitance between the gate electrode and substrate. A gate pattern is formed on a substrate, and an insulating layer is formed over the substrate including over the gate pattern. The thickness of the insulating layer is reduced until the upper surface thereof beneath the level of the upper surface of the gate electrode. A conductive layer is then formed on the substrate, and is anisotropically etched to thereby form wings constituting a first spacer on upper sidewalls of the gate pattern. Then, the insulating layer is etched to leave a portion thereof beneath the wings. This remaining portion of the insulating layer constitutes a capacitance preventative layer that serves as a measure against the subsequent forming of a parasitic capacitor when source / drain electrodes are formed by implanting ions into the substrate and heat-treating the same.
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Description

CROSS REFERENCES TO RELATED PARENT APPLICATION

[0001] This application is a divisional of U.S. patent application Ser. No. 10 / 780,851 filed on 19 Feb. 2004, and claims priority under 35 U.S.C. §119 from Korean Patent Application 2003-012788, filed 28 Feb. 2003, the contents of which are hereby incorporated by reference in their entirety as if fully set forth herein.BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a semiconductor device having a mushroom- or T-shaped gate electrode, and to a method of fabricating the mushroom or T-shaped gate electrode. More specifically, the present invention relates to a semiconductor device having a gate electrode whose upper surface is relatively large so as to accommodate a metal silicide, and to a method of fabricating a gate electrode wherein the upper surface of the gate electrode is enlarged.

[0004] 2. Description of the Related Art

[0005] Recent sub-micron integrated circuit technology aim...

Claims

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