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Crystal growth method of nitride semiconductor

a nitride semiconductor and crystal growth technology, applied in the direction of crystal growth process, polycrystalline material growth, chemically reactive gas, etc., can solve the problems of difficult growth of nitride semiconductor films, poor electrical conductivity, and poor quality of sic, and achieve good electrical conductivity. good, high-efficiency, and high-efficiency

Inactive Publication Date: 2006-06-08
SHIN JOHNGEON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method results in improved crystalline and electrical characteristics, including reduced dislocation and enhanced carrier mobility, with a GaN layer showing a 10-15% narrower Full Width at Half Maximum (FWHM) and decreased carrier density compared to conventional single buffer layers.

Problems solved by technology

It is difficult to grow a nitride semiconductor film and elements of a good quality since nitride substrate of a mono-crystal having a good character is hard to make.
SiC has a good electric conductivity but very expensive so that most elements are using the nitrides grown on a substrate of Sapphire.
Using the conventional single buffer layers of such like said GaN, AIN, InN, SiNx, etc., makes the nitride film with an improved characteristics in crystallographical view, but still has lots of problem to overcome the different physical characteristics between sapphire and GaN.

Method used

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  • Crystal growth method of nitride semiconductor
  • Crystal growth method of nitride semiconductor

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second embodiment

[0029] Moreover, as shown the second embodiment below, the nitride buffer layer (the GaxInyN and 0≦x≦1, 0≦y≦1) not including the aluminum (Al) and bivalent nitride buffer layer is grown additionally on nitride buffer layer including aluminum, and the nitride semiconductor layer can be grown thereon.

first embodiment

[0030]FIG. 2 is a cross-sectional view of a stacking structure of the nitride semiconductor layer grown by the crystal growth method following the present invention. The nitride buffer layer (21) is grown on the top of the sapphire substrate (20) and then, a bivalent nitride buffer layer (22) is grown on the nitride buffer layer (21) including aluminum. After that, a nitride semiconductor (23) is grown on the top of the bivalent nitride buffer layer (22).

[0031] AlxGayInzN (021) and the layer of one selected from AIN, GaN, InN and SiNx is preferred for bivalent nitride buffer layer.

[0032] And preferably, the last nitride semiconductor layer is GaN layer.

[0033] Also, preferably, the nitride buffer layer (21) including aluminum and bivalent nitride buffer layer (22) are grown at the condition of 400˜600° C. to have thickness of 10-1000 Å.

[0034] The effect for adding Indium (In) at the buffer layer is to complement the nitrides having high hardness relatively (because In is ductile) ...

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Abstract

The present invention relates to a method of manufacturing a nitride semiconductor, and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor are grown on a nitride buffer layer including aluminums so that it is possible to improve electrical and crystalline characteristics. The invention may be formed on a sapphire substrate.

Description

[0001] This application is a Divisional of co-pending application Ser. No. 10 / 765,100 filed on Jan. 28, 2004, which claims priority under 35 U.S.C. § 119(a) of Patent Application No. 10-2003-0005948 filed in Korea on Jan. 29, 2003; the entire contents of both applications are hereby incorporated by reference and priority is claimed under 35 U.S.C. § 120.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method of manufacturing a nitride semiconductor and, more particularly, a crystal growth method of a nitride semiconductor wherein a nitride semiconductor is grown on a nitride buffer layer including aluminum so that it is possible to improve electrical and crystalline characteristics. [0004] 2. Description of the Related Art [0005] Photoelectric elements and electric elements using Group III-V nitride semiconductors are developed actively. Luminescence diode and a laser diode with ultraviolet range or visible range are applied to m...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L33/00H01L21/205C30B23/02C30B25/02C30B25/18H01L21/20
CPCC30B23/02C30B25/02C30B25/18C30B29/403H01L21/0242H01L21/02458H01L21/02502H01L21/02505H01L21/0254H01L33/007
Inventor SHIN, JOHNGEON
Owner SHIN JOHNGEON