Thin-film solar cell
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[0031] A CIGS-cell in accordance with the present invention is shown in FIG. 2. It comprises the usual glass substrate 1, the back contact layer 2 of molybdenum, the CIGS-layer 3 and the window layer 5. The usual CdS-buffer layer is replaced with two buffer layers, a first buffer layer containing Zn(O,S) deposited on the CIGS-layer and a second buffer layer 8 deposited on the first one and containing ZnO.
[0032] This is done in one process step in accordance with the invention. At first the Zn(O,S)-layer is deposited by atomic layer deposition (ALD) and immediately following this the ZnO-layer is deposited by A / D in the same process chamber. In effect, it can be considered that the two layers are replaced with one single layer of Zn(O,S), where no sulphur is added during the latter part of the deposition.
[0033] It is the inventive ALD deposition in the same chamber that makes possible the combination of a Zn(O,S)-layer and a ZnO-layer.
[0034] The function of the Zn(O,S)-layer is to...
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