Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device

Abstract

A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a magnetoresistive effect element having an arrangement for obtaining a magnetoresistive effect change by causing a current to flow in the direction perpendicular to the layer surface and a magnetic memory device including this magnetoresistive effect element. Moreover, the present invention relates to a method of manufacturing this magnetoresistive effect element and a method of manufacturing this magnetic memory device. [0003] 2. Description of the Related Art [0004] As information communication devices, in particular, personal small information communication devices such as portable terminal devices (e.g. personal digital assistants) are widely spreading, it is requested that devices such as memories and logic devices comprising these information communication devices or portable terminal devices should become higher in performance, such as they should become higher in integration...

AI Technical Summary

Benefits of technology

[0017] An object of the present invention is to provide a magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of ferromagnetic material layers.

[0018] It is another object of the present invention to provide a magnetic memory device including this magnetoresistive effect element and which can obtain excellent write characteristics.

[0025] According to the arrangement of the magnetoresistive effect element of the present invention, since the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal, the magnetic anisotropies of the ferromagnetic material layers are distributed by rotating field anneal. Further, a uniaxial anisotropy is given to the ferromagnetic material layers by the following static field anneal and the magnetic anisotropies of the ferromagnetic material layers are controlled. Thus, it becomes possible to improve a rectangle property of a resistance-external magnetic field curve of the magnetoresistive effect element and to improve fluctuations of a coercive force.

[0026] According to the arrangement of the magnetic memory device of the present invention, since this magnetic memory device includes the magnetoresistive effect element and the word lines and the bit lines sandwiching the magnetoresistive effect element in the thickness direction and the magnetoresistive effect element has the arrangement of the magnetoresistive effect element according to the present invention, the magnetic anisotropies of the ferromagnetic material layers are controlled by anneal including the rotating field anneal and the following static field anneal. Hence, it becomes possible to improve the rectangle property of the resistance-external magnetic field curve of the magnetoresistive effect element and to improve the fluctuations of the coercive force. Thus, the shape of the asteroid curve of the magnetoresistive effect element can be improved and information can selectively be written in the magnetic memory device easily and stably.

[0027] Further, according to the method of manufacturing the magnetoresistive effect element of the present invention, since the ferromagnetic material layers are annealed by rotating field anneal and the following static field anneal, the magnetic anisotropies of the ferromagnetic material layers are distributed by the rotating field anneal. Further, the uniaxial anisotropy is given to the ferromagnetic material layers by the following static field anneal and the magnetic anisotropies of the ferromagnetic material layers are controlled. Thus, it becomes possible to manufacture the magnetoresistive effect element in which the rectangle property of the resistance-external magnetic field curve of the magnetoresistive effect element and the fluctuations of the coercive force could be improved.

[0028] Furthermore, according to the method of manufacturing the magnetic memory device of the present invention, since the ferromagnetic material layers are annealed by the rotating field anneal and the following static field anneal, by controlling the magnetic anisotropies of the ferromagnetic material layers, it becomes possible to manufacture the magnetic memory device in which the rectangle property of the resistance-external magnetic field curve of the magnetoresistive effect element and the fluctuations of the coercive force could be improved and in which information can be selectively written with ease stably.

Problems solved by technology

However, flash memories have a defect that the information writing speed thereof is slow as the order of microseconds.

On the other hand, it has been pointed out that the FRAM cannot be rewritten so many times.

In the MRAM, when magnetic characteristics of the TMR elements fluctuate at every element or magnetic characteristics fluctuate when the same element is repeatedly used, there arises a problem in which it becomes difficult to selectively write information by using the asteroid characteristics.

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