Method of forming a nanocluster charge storage device

Abstract

A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters. The stack includes a first-formed polysilicon-nitride layer and a second-formed polysilicon-containing layer. The second-formed polysilicon-containing layer is removed from areas containing the plurality of memory cells. In one form the second-formed polysilicon-containing layer also contains a nitride portion which is also removed, thereby leaving the first-formed polysilicon-nitride layer for the memory cell devices. In another form the second-formed ploysilicon-containing layer does not contain nitride and a nitride portion of the first-formed polysilicon-nitride layer is also removed. In the latter form a subsequent nitride layer is formed over the remaining polysilicon layer. In both forms a top portion of the device is protected from oxidation, thereby preserving size and quality of underlying nanoclusters. Gate electrodes of devices peripheral to the memory cell devices also use the second-formed polysilicon-containing layer.

Description

CROSS-RELATED APPLICATION [0001] This application is related to copending U.S. patent application Ser. No. ______ (Attorney Docket No. SC13087TP) by Robert F. Steimle entitled “Method of Forming A Nanocluster Charge Storage Device” filed simultaneously herewith and assigned to the assignee of record herein.BACKGROUND [0002] 1. Field [0003] The present invention relates to semiconductor devices, and, more particularly, to such devices having nanoclusters. [0004] 2. Description of the Related Art [0005] Some devices such as memories (e.g. non volatile memories) utilize discrete charge storage elements called nanoclusters (e.g. of silicon, aluminum, gold, or germanium) for storing charge in a charge storage location of a transistor. In some examples, the nanoclusters are located between two dielectric layers, a bottom dielectric and a control dielectric. Examples of such transistors include thin film storage transistors. A memory typically includes an array of such transistors. Example...

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Problems solved by technology

This oxidizing ambient may penetrate the control dielectric of the charge storage transistors thereby undesirably oxidizing the nanocrystals and undesirably increasing the bottom dielectric thickness.

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