Metal heater

a heater and metal technology, applied in the field of metal heaters, can solve the problems of difficult temperature control, dispersion of temperature or damage in the semiconductor wafer, and metal heaters with such structures, and achieve the effects of shortening the recovery time, quick heating of objects, and constant distance between the heating face of the metal plate and the semiconductor wafer or the lik

Inactive Publication Date: 2006-09-07
IBIDEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0095] The metal heater according to the third aspect of the present invention comprises the plurality of metal plates, and the heater is sandwiched between the metal plates. In comparison with a metal heater that is formed by a single metal plate with a heater provided on the face on the side opposite to the heating face side of the metal plate, since the metal heater having this structure makes the thickness of the metal plate located on the heating face side of the heater thinner than the above-mentioned single metal plate, it becomes possible to more quickly heat an object to be heated, such as a semiconductor wafer or the like, and also to shorten the recovery time.
[0096] In the metal heater according to the third aspect of the present invention, since convex portions for supporting an object to be heated are placed on the heating face opposing the object to be heated of the metal plate corresponding to the area in which the heating element is formed, it becomes possible to make the semiconductor wafer or the like, that is, the object to be heated, less likely to have sagging. Consequently, it is possible to make the distance between the semiconductor wafer or the like and the heating face of the metal plate constant; thus, the entire semiconductor wafer can be heated evenly.

Problems solved by technology

However, metal heaters with such structures have the following problems.
If such warping, sagging and the like occurs in the metal plates, a semiconductor wafer placed on the metal plates cannot be heated evenly, so that a dispersion of temperature or a damage in the semiconductor wafer is generated in some cases.
However, if the metal plates are made thick, the heat capacity of the metal plates is increased, and in the case of heating or cooling an object to be heated, the temperature of the heating faces of the metal plates cannot promptly follow the change of the voltage or the electric current applied to the heating elements, and there has been a problem that temperature control becomes difficult.

Method used

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Examples

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example 1

[0310] Manufacturing of metal heater (see FIGS. 1 and 2)

[0311] (1) A plate-shaped member, made of an aluminum-copper alloy (A2219 (JIS-H4000)), was machined at outer-diameter portion by using an NC lathe (manufactured by Washino Machinery Co., Ltd.) and formed into a disk shape, and this plate-shaped member was then subjected to an end-face machining process, a surface machining process and a rear-face machining process so that a disk-shaped member for an upper metal plate and a disk-shaped member for a lower metal plate were manufactured.

[0312] Next, each of parts to be through holes 415 to which lifter pins used for supporting a semiconductor wafer 419 are inserted, each of concave portions in which supporting pins 418 are placed and each of parts to be a bottomed hole 414 in which a temperature measuring element 416 is embedded were formed by using a machining center (Hitachi Seiki Co., Ltd.).

[0313] Here, the through holes 415 were formed at three positions, and the concave po...

example 2

Manufacturing of Metal Heater

[0330] The same processes as those of Example 1 were carried out except that the thickness of the upper metal plate 411 was set to 20 mm and that the thickness of the lower metal plate 421 was set to 5 mm so that a metal heater was manufactured.

example 3

Manufacturing of Metal Heater

[0331] The same processes as those of Example 1 were carried out except that the thickness of the upper metal plate 411 was set to 25 mm and that the thickness of the lower metal plate 421 was set to 10 mm so that a metal heater was manufactured.

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Abstract

The present invention aims to provide a metal heater that hardly causes dispersion in the temperature of a semiconductor wafer or the like upon heating, and heats it quickly without causing warping and sagging in its metal plate. The present invention provides a metal heater which includes metal plates and a heating element, wherein the number of said metal plates is a plural number, the heating element is sandwiched between the metal plates, and the thickness of a metal plate on a heating face side is the same as or larger than the thickness of a metal plate on a side opposite to said heating face side.

Description

TECHNICAL FIELD [0001] The present invention relates to a metal heater that is mainly used in the semiconductor industry and optical industry. BACKGROUND ART [0002] With respect to an etching device, and a semiconductor producing / examining device including a chemical vapor deposition device or the like, metal heaters having substrates of a metal material such as stainless steel have been used. [0003]FIG. 4 is a cross-sectional view that schematically shows a metal heater having a structure that has been conventionally used. [0004] In this metal heater 450, a heater 453 in which a nichrome wire 452 is sandwiched between silicon rubbers 461 is provided to an aluminum plate 451 having a thickness of 15 mm. SUMMARY OF THE INVENTION [0005] However, metal heaters with such structures have the following problems. [0006] Metal plates to be used for the metal heaters are needed to have a thickness to a certain extent. It is because if the metal plates are thin, the rigidity are low and the m...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C21B9/00H01L21/00H05B3/12H05B3/72
CPCH01L21/67103H01L21/67109H05B3/12H05B3/72
Inventor MASHIMA, KAZUTAKA
Owner IBIDEN CO LTD
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