Oxide films containing titanium

a technology of oxide films and titanium, which is applied in the direction of chemical vapor deposition coatings, crystal growth processes, coatings, etc., can solve the problems of difficult oxygen source ald using water as oxygen source, and inability to generally use halide-containing precursors of these metals,

Inactive Publication Date: 2006-10-05
ASM INTERNATIONAL
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Problems solved by technology

Therefore, halide-containing precursors of these metals are not generally useful in depositing oxides such as SrTiO3 and BaTiO3 by ALD.
In addition, alkaline earth metals easily form hydroxides.
As a result, ALD using water as an oxygen source can be problematic, requiring long purge times and / or high temperatures.
However, long purge times effectively impair the productivity of these processes.
Further, it can be difficult to find a deposition temperature that will not cause decomposition of the precursors and will keep the thin film atoms intact, but will still keep the precursors in gaseous phase and provide the activation energy for the surface reactions.

Method used

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  • Oxide films containing titanium
  • Oxide films containing titanium
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Examples

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example 1

[0054] Four different titanium alkoxides were tested as metal precursors in ALD reactions to deposit TiO2 using H2O and O3 as oxygen sources. Films were deposited at temperatures of 100-300° C. (see FIGS. 1a-g).

[0055] Reactions Using H2O as the Oxygen Source Material:

[0056] a) TiO2 films were deposited at 200-300° C. by ALD using alternate pulses of Ti(OEt)4 as the titanium precursor and water as the oxidant. The growth rate increased from 0.30 to 0.39 Å / cycle with increasing temperature. The film uniformity (Uf % 1σ) varied between 0.98 and 4.43, with the best uniformity being obtained at a deposition temperature of 250° C.

[0057] b) TiO2 films were deposited by ALD at deposition temperatures of 200-300° C., using alternating pulses of Ti(OiPr)4 as the titanium precursor and water as the oxidant. Growth rates were about 0.22-0.42 Å / cycle, with the lowest value being obtained at 250° C. and the highest at 300° C. Film uniformity (Uf % 1σ) at these temperatures was 4.84 and 6.84 re...

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Abstract

Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application claims priority as a continuation in part of U.S. application Ser. No. 09 / 787,062, filed Jun. 28, 2001. The priority application is incorporated by reference herein in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] This invention relates generally to processes for depositing titanium-containing oxide films. Certain embodiments relate to processes for manufacturing titanium-containing oxide thin films by atomic layer deposition using volatile titanium compounds as source materials. [0004] 2. Description of the Related Art [0005] Atomic layer deposition (“ALD”) refers to vapour deposition-type methods in which a material, typically a thin film, is deposited on a substrate from vapour phase reactants. It is based on sequential self-saturating surface reactions. ALD is described in detail in U.S. Pat. Nos. 4,058,430 and 5,711,811, incorporated herein by reference. ALD reactors benefit from ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C30B1/00C30B5/00C30B28/02C30B3/00
CPCC23C16/405C23C16/409C30B29/32C23C16/45553C30B25/02C23C16/45531
Inventor RAHTU, ANTTIMATERO, RAIJALESKELA, MARKKURITALA, MIKKOHATANPAA, TIMOHANNINEN, TIMOVEHKAMAKI, MARKO
Owner ASM INTERNATIONAL
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